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公开(公告)号：US20160276590A1
公开(公告)日：2016-09-22
申请号：US14986852
申请日：2016-01-04
发明人： Do Hwan Kim , Hojin Lee , Han Wool Park , Keun-Yeong Choi
IPC分类号： H01L51/00
CPC分类号： H01L51/0036 , B01J20/226 , C23C18/1204 , C23C18/1254 , H01L51/0004 , H01L51/0035 , H01L51/004 , H01L51/0094 , H01L51/0558 , H01L51/42 , H01L51/5012 , Y02E10/549 , Y02P70/521
摘要： An organic semiconductor compound and a method for manufacturing the same is provided. The method for manufacturing the organic semiconductor compound may include stirring a solated organic semiconductor and a solated organometallic precursor. Herein, the manufacturing the organic semiconductor compound includes: forming a three-dimensional organic semiconductor compound by allowing the solated organic semiconductor to orthogonally penetrate one or more gaps in a lattice structure of a gelated organometallic precursor formed by stirring the solated organometallic precursor.
摘要翻译： 提供有机半导体化合物及其制造方法。 制造有机半导体化合物的方法可以包括搅拌溶剂化的有机半导体和溶剂化的有机金属前体。 这里，制造有机半导体化合物包括：通过使溶剂化的有机半导体正交地穿透通过搅拌溶剂化的有机金属前体而形成的凝胶化的有机金属前体的晶格结构中的一个或多个间隙而形成三维有机半导体化合物。
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公开(公告)号：US10164190B2
公开(公告)日：2018-12-25
申请号：US14986852
申请日：2016-01-04
申请人： SOONGSIL UNIVERSITY RESEARCH CONSORTIUM TECHNO PARK , INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY
发明人： Do Hwan Kim , Hojin Lee , Han Wool Park , Keun-Yeong Choi
摘要： An organic semiconductor compound and a method for manufacturing the same is provided. The method for manufacturing the organic semiconductor compound may include stirring a solated organic semiconductor and a solated organometallic precursor. Herein, the manufacturing the organic semiconductor compound includes: forming a three-dimensional organic semiconductor compound by allowing the solated organic semiconductor to orthogonally penetrate one or more gaps in a lattice structure of a gelated organometallic precursor formed by stirring the solated organometallic precursor.
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