公开(公告)号：US12063794B2

公开(公告)日：2024-08-13

申请号：US17334810

申请日：2021-05-31

Applicant: Southern University of Sciene and Technology

Inventor： Guobiao Zhang

IPC: H10B63/00 ,  H10N70/00

CPC classification number: H10B63/84 ,  H10B63/20 ,  H10N70/841 ,  H10N70/063

Abstract: High-density three-dimensional (3-D) vertical memory (3D-MV) includes lightly-doped-segment (LDS) 3D-MV and non-circular-hole (NCH) 3D-MV. The preferred LDS 3D-MV takes advantage of longitudinal space, instead of lateral space, to guarantee normal write operation. On the other hand, the lateral cross-section of the memory hole of the preferred NCH 3D-MV includes at least two intersecting pairs of parallel sides, with each pair formed through a single DUV exposure and having a minimum spacing