公开(公告)号：US07029781B2

公开(公告)日：2006-04-18

申请号：US10348519

申请日：2003-01-21

申请人： Stefano Lo Priore ,  Michele Palmieri ,  Ubaldo Mastromatteo

发明人： Stefano Lo Priore ,  Michele Palmieri ,  Ubaldo Mastromatteo

IPC分类号： H01M8/10 ,  H01M8/04 ,  H01M8/24

CPC分类号： H01M8/241 ,  H01M4/8626 ,  H01M8/0247 ,  H01M8/1007 ,  H01M8/2404 ,  Y02P70/56

摘要： A microfuel cell includes a substrate and a plurality of spaced-apart PEM dividers extending outwardly to define anodic and cathodic microfluidic channels. An anodic catalyst/electrode lines at least a portion of the anodic microfluidic channels, and a cathodic catalyst/electrode lines at least a portion of the cathodic microfluidic channels. Each anodic and cathodic catalyst/electrode may extend beneath an adjacent portion of a PEM divider in some embodiments. Alternately, the microfuel cell may include a plurality of stacked substrates, in which a first substrate has first microfluidic fuel cell reactant channels. A PEM layer may be adjacent the first surface of the first substrate, an anodic catalyst/electrode layer may be adjacent one side of the PEM layer, and a cathodic catalyst/electrode layer may be adjacent an opposite side of the PEM layer. An adhesive layer may secure the first substrate to an adjacent substrate defining at least a second microfluidic fuel cell reactant channel.

摘要翻译： 微细脂肪电池包括衬底和向外延伸以限定阳极和阴极微流体通道的多个间隔开的PEM分配器。 阳极催化剂/电极排列至少一部分阳极微流体通道，阴极催化剂/电极管线至少部分阴极微流体通道。 在一些实施例中，每个阳极和阴极催化剂/电极可以在PEM分配器的相邻部分下方延伸。 或者，微细脂肪细胞可以包括多个堆叠的基底，其中第一基底具有第一微流体燃料电池反应物通道。 PEM层可以与第一基板的第一表面相邻，阳极催化剂/电极层可以邻近PEM层的一侧，并且阴极催化剂/电极层可以邻近PEM层的相对侧。 粘合剂层可以将第一基底固定到限定至少第二微流体燃料电池反应物通道的相邻基底。

公开(公告)号：US09012810B2

公开(公告)日：2015-04-21

申请号：US11739543

申请日：2007-04-24

申请人： Gaetano Santoruvo ,  Stefano Lo Priore

发明人： Gaetano Santoruvo ,  Stefano Lo Priore

IPC分类号： H05B1/00 ,  H05B3/28 ,  B01J19/00 ,  B41J2/14 ,  H01L27/12 ,  H01L29/06 ,  H01L29/78 ,  B01L3/00 ,  B01L7/00 ,  H01L23/34

CPC分类号： H05B3/28 ,  B01J19/0093 ,  B01J2219/00783 ,  B01J2219/00873 ,  B01L3/5027 ,  B01L7/52 ,  B41J2/14129 ,  B41J2202/13 ,  H01L23/345 ,  H01L27/1203 ,  H01L29/0657 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated heater formed as a field effect transistor in a semiconductor substrate, with the transistor having source and drain regions with a channel region extending therebetween to conduct current. The channel region has a resistance when conducting current to generate heat above a selected threshold. A dielectric layer is disposed on the channel region and a gate electrode is disposed on the dielectric layer to control the current of the channel region. A thermally insulating barrier is formed in the semiconductor material and may extend about the transistor. The object to be heated is positioned to receive the heat generated by the resistance of the channel region; the object may be a fluid chamber.

摘要翻译： 在半导体衬底中形成为场效应晶体管的集成加热器，其中晶体管具有在其间延伸的沟道区的源极和漏极区域以导通电流。 当传导电流以产生高于选定阈值的热量时，沟道区域具有电阻。 电介质层设置在沟道区上，并且在电介质层上设置栅电极以控制沟道区的电流。 在半导体材料中形成隔热屏障，并且可以围绕晶体管延伸。 被加热物被定位成接收由通道区域的电阻产生的热量; 物体可以是流体室。

公开(公告)号：US20070284360A1

公开(公告)日：2007-12-13

申请号：US11739543

申请日：2007-04-24

申请人： Gaetano Santoruvo ,  Stefano Lo Priore

发明人： Gaetano Santoruvo ,  Stefano Lo Priore

IPC分类号： F15C5/00

CPC分类号： H05B3/28 ,  B01J19/0093 ,  B01J2219/00783 ,  B01J2219/00873 ,  B01L3/5027 ,  B01L7/52 ,  B41J2/14129 ,  B41J2202/13 ,  H01L23/345 ,  H01L27/1203 ,  H01L29/0657 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated heater formed as a field effect transistor in a semiconductor substrate, with the transistor having source and drain regions with a channel region extending therebetween to conduct current. The channel region has a resistance when conducting current to generate heat above a selected threshold. A dielectric layer is disposed on the channel region and a gate electrode is disposed on the dielectric layer to control the current of the channel region. A thermally insulating barrier is formed in the semiconductor material and may extend about the transistor. The object to be heated is positioned to receive the heat generated by the resistance of the channel region; the object may be a fluid chamber.

摘要翻译： 在半导体衬底中形成为场效应晶体管的集成加热器，其中晶体管具有在其间延伸的沟道区域的源极和漏极区域以传导电流。 当传导电流以产生高于选定阈值的热量时，沟道区域具有电阻。 电介质层设置在沟道区上，并且在电介质层上设置栅电极以控制沟道区的电流。 在半导体材料中形成隔热屏障，并且可以围绕晶体管延伸。 被加热物被定位成接收由通道区域的电阻产生的热量; 物体可以是流体室。