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公开(公告)号：US20080218253A1
公开(公告)日：2008-09-11
申请号：US11681067
申请日：2007-03-01
IPC分类号： G05F1/10
摘要： A voltage reference includes a first cell configured to receive a first proportional to absolute temperature (PTAT) current and a second cell configured to receive a second PTAT current. The first cell includes a diode-connected stack of insulated-gate field-effect transistors (IGFETs). The diode-connected stack of IGFETs includes a first transistor that is configured to be biased in a triode weak inversion region. The second cell includes a diode-connected stack of IGFETs and a serially coupled resistor. A magnitude of the second PTAT current is based on a drain-to-source voltage of the first transistor and a value of the serially coupled resistor. The voltage reference provides a reference voltage at a reference node of the second cell based on the second PTAT current.
摘要翻译： 电压基准包括被配置为接收第一与绝对温度（PTAT）成比例的电流的第一单元和被配置为接收第二PTAT电流的第二单元。 第一个单元包括二极管连接的绝缘栅场效应晶体管（IGFET）堆叠。 IGFET的二极管连接的堆叠包括被配置为偏置在三极管弱反转区域中的第一晶体管。 第二单元包括二极管连接的IGFET堆叠和串联电阻器。 第二PTAT电流的大小基于第一晶体管的漏极 - 源极电压和串联电阻器的值。 电压参考基于第二PTAT电流在第二单元的参考节点处提供参考电压。
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公开(公告)号：US07486129B2
公开(公告)日：2009-02-03
申请号：US11681067
申请日：2007-03-01
摘要： A voltage reference includes a first cell configured to receive a first proportional to absolute temperature (PTAT) current and a second cell configured to receive a second PTAT current. The first cell includes a diode-connected stack of insulated-gate field-effect transistors (IGFETs). The diode-connected stack of IGFETs includes a first transistor that is configured to be biased in a triode weak inversion region. The second cell includes a diode-connected stack of IGFETs and a serially coupled resistor. A magnitude of the second PTAT current is based on a drain-to-source voltage of the first transistor and a value of the serially coupled resistor. The voltage reference provides a reference voltage at a reference node of the second cell based on the second PTAT current.
摘要翻译： 电压参考包括被配置为接收第一与绝对温度（PTAT）成比例的电流的第一单元和被配置为接收第二PTAT电流的第二单元。 第一个单元包括二极管连接的绝缘栅场效应晶体管（IGFET）堆叠。 IGFET的二极管连接的堆叠包括被配置为偏置在三极管弱反转区域中的第一晶体管。 第二单元包括二极管连接的IGFET堆叠和串联电阻器。 第二PTAT电流的大小基于第一晶体管的漏极 - 源极电压和串联电阻器的值。 电压参考基于第二PTAT电流在第二单元的参考节点处提供参考电压。
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3.发明申请公开(公告)号：US20080278135A1
公开(公告)日：2008-11-13
申请号：US11747414
申请日：2007-05-11
IPC分类号： G05F1/40
CPC分类号： G05F1/575 , H02M3/156 , H02M2001/0006 , H03K17/08122
摘要： A clamping circuit of a DC/DC regulator includes a reference current generator to generate a reference current. The reference current can be based upon a specified maximum voltage across a bootstrap capacitor of the DC/DC regulator. The clamping circuit also includes a current generator that generates a current based on the voltage across the bootstrap capacitor. The current generated by the current generator is compared to the generated reference current. Based on the comparison, the voltage across the bootstrap capacitor is regulated. By regulating the voltage across the bootstrap capacitor based on current, rather than based directly on the voltage across the capacitor, the design of the clamping circuit is simplified compared to voltage-based implementations.
摘要翻译： DC / DC调节器的钳位电路包括用于产生参考电流的参考电流发生器。 参考电流可以基于DC / DC调节器的自举电容器上规定的最大电压。 钳位电路还包括电流发生器，其基于自举电容器两端的电压产生电流。 将电流发生器产生的电流与生成的参考电流进行比较。 根据比较，调节自举电容两端的电压。 通过基于电流来调节自举电容器上的电压，而不是直接基于电容器两端的电压，与基于电压的实现相比，钳位电路的设计被简化。
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公开(公告)号：US07994766B2
公开(公告)日：2011-08-09
申请号：US12130164
申请日：2008-05-30
CPC分类号： H02M3/158 , H02M2001/0009
摘要： A current sensor having a pair of sense transistors is disclosed. The sense transistors sense a current conducted by a power transistor of a voltage regulator. The ratio in size between the power transistor and the sense transistors corresponds to a scaling factor M. Each sense transistor has an associated series connected sense resistor. The two sense resistors are unbalanced and provide a differential voltage based on the sensed current at the sense transistor to a transconductor. The transconductor has heavy emitter degeneration to provide an output current substantially proportional to the current conducted by the primary power transistor, the proportion determined by the scaling factor M and a ratio of the emitter degeneration and sense resistors.
摘要翻译： 公开了一种具有一对感测晶体管的电流传感器。 感测晶体管感测由电压调节器的功率晶体管传导的电流。 功率晶体管和感测晶体管之间的尺寸比对应于缩放因子M.每个感测晶体管具有相关联的串联连接的检测电阻器。 两个感测电阻器是不平衡的，并且基于在感测晶体管处的感测电流到跨导器提供差分电压。 跨导体具有重的发射极退化，以提供基本上与主功率晶体管传导的电流成比例的输出电流，由比例因子M确定的比例以及发射极退化和检测电阻的比率。
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公开(公告)号：US20090295353A1
公开(公告)日：2009-12-03
申请号：US12130164
申请日：2008-05-30
IPC分类号： G05F1/00
CPC分类号： H02M3/158 , H02M2001/0009
摘要： A current sensor having a pair of sense transistors is disclosed. The sense transistors sense a current conducted by a power transistor of a voltage regulator. The ratio in size between the power transistor and the sense transistors corresponds to a scaling factor M. Each sense transistor has an associated series connected sense resistor. The two sense resistors are unbalanced and provide a differential voltage based on the sensed current at the sense transistor to a transconductor. The transconductor has heavy emitter degeneration to provide an output current substantially proportional to the current conducted by the primary power transistor, the proportion determined by the scaling factor M and a ratio of the emitter degeneration and sense resistors.
摘要翻译： 公开了一种具有一对感测晶体管的电流传感器。 感测晶体管感测由电压调节器的功率晶体管传导的电流。 功率晶体管和感测晶体管之间的尺寸比对应于缩放因子M.每个感测晶体管具有相关联的串联连接的检测电阻器。 两个感测电阻器是不平衡的，并且基于在感测晶体管处的感测电流到跨导器提供差分电压。 跨导体具有重的发射极退化，以提供基本上与主功率晶体管传导的电流成比例的输出电流，由比例因子M确定的比例以及发射极退化和检测电阻的比率。
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公开(公告)号：US07586367B2
公开(公告)日：2009-09-08
申请号：US11739933
申请日：2007-04-25
IPC分类号： G06F7/12
CPC分类号： G01R19/0092 , H02M3/156 , H02M2001/0009
摘要： A current sensor senses the current at a sense transistor and generates an output current that is an accurate proportional representation of the current at the sense transistor. Furthermore, the sensed current is relatively independent of the resistive load of the feedback path at feedback control module to which it is applied. In one embodiment, the feedback control module uses the sensed current in a DC-DC voltage converter to regulate a voltage. The current sensor employs a pair of operational amplifiers to match a voltage at a current electrode of a transistor that generates the output current to a voltage at a current electrode of the sense transistor, such that an effective resistance of the transistor generating the output current is significantly higher than the resistive load of the feedback control module, thereby ensuring that the output current is relatively independent of the resistive load of the feedback control module.
摘要翻译： 电流传感器感测感测晶体管上的电流，并产生输出电流，其是在感测晶体管处的电流的精确比例表示。 此外，感测的电流相对独立于其所应用的反馈控制模块处的反馈路径的电阻负载。 在一个实施例中，反馈控制模块使用DC-DC电压转换器中的感测电流来调节电压。 电流传感器使用一对运算放大器来将产生输出电流的晶体管的电流电极上的电压与感测晶体管的电流电极处的电压相匹配，使得产生输出电流的晶体管的有效电阻为 显着高于反馈控制模块的电阻负载，从而确保输出电流相对独立于反馈控制模块的电阻负载。
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7.发明授权公开(公告)号：US07518352B2
公开(公告)日：2009-04-14
申请号：US11747414
申请日：2007-05-11
CPC分类号： G05F1/575 , H02M3/156 , H02M2001/0006 , H03K17/08122
摘要： A clamping circuit of a DC/DC regulator includes a reference current generator to generate a reference current. The reference current can be based upon a specified maximum voltage across a bootstrap capacitor of the DC/DC regulator. The clamping circuit also includes a current generator that generates a current based on the voltage across the bootstrap capacitor. The current generated by the current generator is compared to the generated reference current. Based on the comparison, the voltage across the bootstrap capacitor is regulated. By regulating the voltage across the bootstrap capacitor based on current, rather than based directly on the voltage across the capacitor, the design of the clamping circuit is simplified compared to voltage-based implementations.
摘要翻译： DC / DC调节器的钳位电路包括用于产生参考电流的参考电流发生器。 参考电流可以基于DC / DC调节器的自举电容器上规定的最大电压。 钳位电路还包括电流发生器，其基于自举电容器两端的电压产生电流。 将电流发生器产生的电流与生成的参考电流进行比较。 根据比较，调节自举电容两端的电压。 通过基于电流来调节自举电容器上的电压，而不是直接基于电容器两端的电压，与基于电压的实现相比，钳位电路的设计被简化。
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公开(公告)号：US20080265850A1
公开(公告)日：2008-10-30
申请号：US11739933
申请日：2007-04-25
IPC分类号： G05F1/00
CPC分类号： G01R19/0092 , H02M3/156 , H02M2001/0009
摘要： A current sensor senses the current at a sense transistor and generates an output current that is an accurate proportional representation of the current at the sense transistor. Furthermore, the sensed current is relatively independent of the resistive load of the feedback path at feedback control module to which it is applied. In one embodiment, the feedback control module uses the sensed current in a DC-DC voltage converter to regulate a voltage. The current sensor employs a pair of operational amplifiers to match a voltage at a current electrode of a transistor that generates the output current to a voltage at a current electrode of the sense transistor, such that an effective resistance of the transistor generating the output current is significantly higher than the resistive load of the feedback control module, thereby ensuring that the output current is relatively independent of the resistive load of the feedback control module.
摘要翻译： 电流传感器感测感测晶体管上的电流，并产生输出电流，其是在感测晶体管处的电流的精确比例表示。 此外，感测的电流相对独立于其所应用的反馈控制模块处的反馈路径的电阻负载。 在一个实施例中，反馈控制模块使用DC-DC电压转换器中的感测电流来调节电压。 电流传感器使用一对运算放大器来将产生输出电流的晶体管的电流电极上的电压与感测晶体管的电流电极处的电压相匹配，使得产生输出电流的晶体管的有效电阻为 显着高于反馈控制模块的电阻负载，从而确保输出电流相对独立于反馈控制模块的电阻负载。
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