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1.发明申请Increasing Exposure Tool Alignment Signal Strength for a Ferroelectric Capacitor Layer 有权增加铁电电容层的曝光工具对准信号强度公开(公告)号：US20110014360A1
公开(公告)日：2011-01-20
申请号：US12889851
申请日：2010-09-24
IPC分类号： H05K3/00
CPC分类号： H01L23/544 , G03F9/7076 , G03F9/7084 , H01L2223/54453 , H01L2924/0002 , Y10T29/42 , H01L2924/00
摘要： An improved alignment structure for photolithographic pattern alignment is disclosed. A topographical alignment mark in an IC under a low reflectivity layer may be difficult to register. A reflective layer is formed on top of the low reflectivity layer so that the topography of the alignment mark is replicated in the reflective layer, enabling registration of the alignment mark using common photolithographic scanners and steppers. The reflective layer may be one or more layers, and may be metallic, dielectric or both. The reflective layer may be global over the entire IC or may be local to the alignment mark area. The reflective layer may be removed during subsequent processing, possibly with assist from an added etch stop layer, or may remain in the completed IC. The disclosed alignment mark structure is applicable to an IC with a stack of ferroelectric capacitor materials.
摘要翻译： 公开了用于光刻图案对准的改进的对准结构。 在低反射率层下的IC中的地形对准标记可能难以注册。 在低反射层的顶部形成反射层，使得对准标记的形貌在反射层中复制，使得能够使用普通的光刻扫描器和步进器对准对准标记。 反射层可以是一个或多个层，并且可以是金属的，电介质的或两者的。 反射层可以在整个IC上是全局的，或者可以是对准标记区域的局部。 可以在随后的处理期间去除反射层，可能来自添加的蚀刻停止层的辅助，或者可以保留在完整的IC中。 所公开的对准标记结构可应用于具有堆叠铁电电容器材料的IC。
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2.发明授权Increasing exposure tool alignment signal strength for a ferroelectric capacitor layer 有权增加铁电电容层的曝光工具对准信号强度公开(公告)号：US08586130B2
公开(公告)日：2013-11-19
申请号：US12889851
申请日：2010-09-24
CPC分类号： H01L23/544 , G03F9/7076 , G03F9/7084 , H01L2223/54453 , H01L2924/0002 , Y10T29/42 , H01L2924/00
摘要： An improved alignment structure for photolithographic pattern alignment is disclosed. A topographical alignment mark in an IC under a low reflectivity layer may be difficult to register. A reflective layer is formed on top of the low reflectivity layer so that the topography of the alignment mark is replicated in the reflective layer, enabling registration of the alignment mark using common photolithographic scanners and steppers. The reflective layer may be one or more layers, and may be metallic, dielectric or both. The reflective layer may be global over the entire IC or may be local to the alignment mark area. The reflective layer may be removed during subsequent processing, possibly with assist from an added etch stop layer, or may remain in the completed IC. The disclosed alignment mark structure is applicable to an IC with a stack of ferroelectric capacitor materials.
摘要翻译： 公开了用于光刻图案对准的改进的对准结构。 在低反射率层下的IC中的地形对准标记可能难以注册。 在低反射层的顶部形成反射层，使得对准标记的形貌在反射层中复制，使得能够使用普通的光刻扫描器和步进器对准对准标记。 反射层可以是一个或多个层，并且可以是金属的，电介质的或两者的。 反射层可以在整个IC上是全局的，或者可以是对准标记区域的局部。 可以在随后的处理期间去除反射层，可能来自添加的蚀刻停止层的辅助，或者可以保留在完整的IC中。 所公开的对准标记结构可应用于具有堆叠铁电电容器材料的IC。
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