公开(公告)号：US07492008B2

公开(公告)日：2009-02-17

申请号：US10896812

申请日：2004-07-22

申请人： Stephen Richard Fox ,  Neena Garg ,  Kenneth John Giewont ,  Junedong Lee ,  Siegfried Lutz Maurer ,  Dan Moy ,  Maurice Heathcote Norcott ,  Devendra Kumar Sadana

发明人： Stephen Richard Fox ,  Neena Garg ,  Kenneth John Giewont ,  Junedong Lee ,  Siegfried Lutz Maurer ,  Dan Moy ,  Maurice Heathcote Norcott ,  Devendra Kumar Sadana

IPC分类号： H01L21/336

CPC分类号： H01L21/76243

摘要： A method for forming a semiconductor-on-insulator (SOI) substrate is described incorporating the steps of heating a substrate, implanting oxygen into a heated substrate, cooling the substrate, implanting into a cooled substrate and annealing. The steps of implanting may be at several energies to provide a plurality of depths and corresponding buried damaged regions. Prior to implanting, the step of cleaning the substrate surface and/or forming a patterned mask thereon may be performed. The invention overcomes the problem of raising the quality of buried oxide and its properties such as surface roughness, uniform thickness and breakdown voltage Vbd.

摘要翻译： 描述了一种用于形成绝缘体上半导体（SOI）衬底的方法，其包括加热衬底，将氧注入加热衬底，冷却衬底，注入冷却衬底和退火的步骤。 植入的步骤可以是几种能量以提供多个深度和相应的埋入损伤区域。 在植入之前，可以执行清洁衬底表面和/或在其上形成图案化掩模的步骤。 本发明克服了提高掩埋氧化物质量及其性能如表面粗糙度，均匀厚度和击穿电压Vbd的问题。

公开(公告)号：US06784072B2

公开(公告)日：2004-08-31

申请号：US10200822

申请日：2002-07-22

申请人： Stephen Richard Fox ,  Neena Garg ,  Kenneth John Giewont ,  Junedong Lee ,  Siegfried Lutz Maurer ,  Dan Moy ,  Maurice Heathcote Norcott ,  Devendra Kumar Sadana

发明人： Stephen Richard Fox ,  Neena Garg ,  Kenneth John Giewont ,  Junedong Lee ,  Siegfried Lutz Maurer ,  Dan Moy ,  Maurice Heathcote Norcott ,  Devendra Kumar Sadana

IPC分类号： H01L2176

CPC分类号： H01L21/76243

摘要： A method for forming a semiconductor-on-insulator (SOI) substrate is described incorporating the steps of heating a substrate, implanting oxygen into a heated substrate, cooling the substrate, implanting into a cooled substrate and annealing. The steps of implanting may be at several energies to provide a plurality of depths and corresponding buried damaged regions. Prior to implanting, the step of cleaning the substrate surface and/or forming a patterned mask thereon may be performed. The invention overcomes the problem of raising the quality of buried oxide and its properties such as surface roughness, uniform thickness and breakdown voltage Vbd.

摘要翻译： 描述了一种用于形成绝缘体上半导体（SOI）衬底的方法，其包括加热衬底，将氧注入加热衬底，冷却衬底，注入冷却衬底和退火的步骤。 植入的步骤可以是几种能量以提供多个深度和相应的埋入损伤区域。 在植入之前，可以执行清洁衬底表面和/或在其上形成图案化掩模的步骤。 本发明克服了提高掩埋氧化物质量及其性能如表面粗糙度，均匀厚度和击穿电压Vbd的问题。