公开(公告)号：US20100078855A1

公开(公告)日：2010-04-01

申请号：US12473115

申请日：2009-05-27

申请人： Stephen Y. Chou ,  Peng Can ,  Wendi Li ,  Shufung Bai

发明人： Stephen Y. Chou ,  Peng Can ,  Wendi Li ,  Shufung Bai

IPC分类号： B29C59/02

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  Y10S977/887

摘要： This invention relates to the fabrication of large area nanoimprint molds having complex patterns with minimal or no use of direct-writing, such as electron beam lithography, ion, laser beam, or mechanical beam lithography. This can be accomplished by forming a pattern of simple nanoscale features and converting the simple features into more complex nanoscale features by a process comprising shadow deposition. The process may also include steps of uniform deposition, etching and smoothing depending on the shape of the complex features.

摘要翻译： 本发明涉及具有复杂图案的大面积纳米压印模具的制造，其具有最少或不使用直接写入，例如电子束光刻，离子，激光束或机械光束光刻。 这可以通过形成简单的纳米尺度特征的图案并通过包括阴影沉积的方法将简单特征转换成更复杂的纳米尺度特征来实现。 该方法还可以包括根据复杂特征的形状的均匀沉积，蚀刻和平滑的步骤。