公开(公告)号：US20150123248A1

公开(公告)日：2015-05-07

申请号：US14596269

申请日：2015-01-14

Applicant: SunEdison Inc.

Inventor： Robert J. Falster ,  Vladimir Voronkov

IPC: H01L29/16 ,  H01L21/322

CPC classification number: H01L29/16 ,  H01L21/3221 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: Processes for suppressing minority carrier lifetime degradation in silicon wafers are disclosed. The processes involve quench cooling the wafers to increase the density of nano-precipitates in the silicon wafers and the rate at which interstitial atoms are consumed by the nano-precipitates.

Abstract translation: 公开了抑制硅晶片中的少数载流子寿命劣化的方法。 该方法包括骤冷冷却晶片以增加硅晶片中的纳米沉淀物的密度以及间隙原子被纳米沉淀物消耗的速率。

公开(公告)号：US09142616B2

公开(公告)日：2015-09-22

申请号：US14596269

申请日：2015-01-14

Applicant: SunEdison Inc.

Inventor： Robert J. Falster ,  Vladimir Voronkov

IPC: H01L21/324 ,  H01L29/16 ,  H01L21/322

CPC classification number: H01L29/16 ,  H01L21/3221 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: Processes for suppressing minority carrier lifetime degradation in silicon wafers are disclosed. The processes involve quench cooling the wafers to increase the density of nano-precipitates in the silicon wafers and the rate at which interstitial atoms are consumed by the nano-precipitates.

Abstract translation: 公开了抑制硅晶片中的少数载流子寿命劣化的方法。 该方法包括骤冷冷却晶片以增加硅晶片中的纳米沉淀物的密度以及间隙原子被纳米沉淀物消耗的速率。