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    Pixel driving circuit and method of driving the same
    1.
    发明申请
    Pixel driving circuit and method of driving the same 有权
    像素驱动电路及其驱动方法

    公开(公告)号：US20070029465A1

    公开(公告)日：2007-02-08

    申请号：US11435961

    申请日：2006-05-17

    申请人： Sung-Ho Choi ,  Yi-Tae Kim ,  Young-Chan Kim ,  Hae-Kyung Kong

    发明人： Sung-Ho Choi ,  Yi-Tae Kim ,  Young-Chan Kim ,  Hae-Kyung Kong

    IPC分类号： H01L27/00

    CPC分类号： H04N5/3741

    摘要： Contacts and/or a transistor are shared by neighboring pixel circuits in an image sensor. In addition, a common interconnect line provides common control signals for minimizing metal wiring. Such minimization of space for the shared contacts, transistor, and control signals enhances the fill factor of photodiodes in the image sensor.

    摘要翻译： 触点和/或晶体管由图像传感器中的相邻像素电路共享。 此外，公共互连线提供用于最小化金属布线的公共控制信号。 共享触点，晶体管和控制信号的这种空间最小化增强了图像传感器中光电二极管的填充系数。

    Pixels for CMOS image sensors
    3.
    发明申请
    Pixels for CMOS image sensors 审中-公开
    CMOS图像传感器的像素

    公开(公告)号：US20060261431A1

    公开(公告)日：2006-11-23

    申请号：US11436278

    申请日：2006-05-18

    申请人： Yi-Tae Kim ,  Young-Chan Kim ,  Hae-Kyung Kong ,  Sung-Ho Choi

    发明人： Yi-Tae Kim ,  Young-Chan Kim ,  Hae-Kyung Kong ,  Sung-Ho Choi

    IPC分类号： H01L31/06

    CPC分类号： H01L27/14609 ,  H04N5/3559 ,  H04N5/3597 ,  H04N5/3745 ,  H04N5/37457

    摘要： A unit pixel of a complementary metal-oxide semiconductor (CMOS) image sensor includes a photoelectric conversion element, a transfer transistor, a boosting capacitor and a signal transfer circuit, where the photoelectric conversion element generates a charge based on incident light, the transfer transistor transfers the charge to a floating diffusion node in response to a transfer control signal, the boosting capacitor is disposed between a gate of the transfer transistor and the floating diffusion node, the signal transfer circuit transfers an electric potential of the floating diffusion node in response to a selection signal, and a dynamic range of the electric potential of the floating diffusion node may be widened and a drain-source voltage difference of the transfer transistor may be increased so that the charge transfer efficiency may be enhanced.

    摘要翻译： 互补金属氧化物半导体（CMOS）图像传感器的单位像素包括光电转换元件，转移晶体管，升压电容器和信号传输电路，其中光电转换元件基于入射光产生电荷，转移晶体管 响应于转移控制信号将电荷转移到浮动扩散节点，升压电容器设置在转移晶体管的栅极和浮动扩散节点之间，信号传输电路响应于 可以加宽选择信号和浮动扩散节点的电位的动态范围，并且可以增加转移晶体管的漏极 - 源极电压差，从而可以提高电荷转移效率。

    CMOS image sensor and image sensing method using the same
    4.
    发明授权
    CMOS image sensor and image sensing method using the same 有权
    CMOS图像传感器和图像感应方法使用相同

    公开(公告)号：US07825970B2

    公开(公告)日：2010-11-02

    申请号：US11826588

    申请日：2007-07-17

    申请人： Sung-Ho Choi ,  Jung-Chak Ahn ,  Yi-Tae Kim ,  Young-Chan Kim ,  Hae-Kyung Kong

    发明人： Sung-Ho Choi ,  Jung-Chak Ahn ,  Yi-Tae Kim ,  Young-Chan Kim ,  Hae-Kyung Kong

    IPC分类号： H04N3/14 ,  H04N5/335

    CPC分类号： H01L27/14645 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14641 ,  H01L27/14656 ,  H04N5/347 ,  H04N5/37457

    摘要： Example embodiments may provide a CMOS image sensor. The CMOS image sensor may include a plurality of unit blocks each including two unit pixels. Each unit block may include two photodiodes having a hexagonal shape, a floating diffusion shared by the two unit pixels, a first transfer transistor and a second transfer transistor between the floating diffusion and the two photodiodes, respectively, a reset transistor connected with the floating diffusion, a drive transistor with a gate connected with the floating diffusion, and/or a selection transistor connected to the drive transistor in series. Example embodiment CMOS image sensors may be used in digital cameras, mobile devices, computer cameras, or the like.

    摘要翻译： 示例性实施例可以提供CMOS图像传感器。 CMOS图像传感器可以包括多个单元块，每个单元块包括两个单位像素。 每个单元块可以包括具有六边形形状的两个光电二极管，由两个单位像素共享的浮动扩散，分别在浮动扩散和两个光电二极管之间的第一传输晶体管和第二传输晶体管，与浮动扩散器连接的复位晶体管 ，具有与浮动扩散连接的栅极的驱动晶体管和/或串联连接到驱动晶体管的选择晶体管。 示例性实施例CMOS图像传感器可以用于数码相机，移动设备，计算机照相机等。

    CMOS image sensor and image sensing method using the same
    5.
    发明申请
    CMOS image sensor and image sensing method using the same 有权
    CMOS图像传感器和图像感应方法使用相同

    公开(公告)号：US20080018765A1

    公开(公告)日：2008-01-24

    申请号：US11826588

    申请日：2007-07-17

    申请人： Sung-Ho Choi ,  Jung-Chak Ahn ,  Yi-Tae Kim ,  Young-Chan Kim ,  Hae-Kyung Kong

    发明人： Sung-Ho Choi ,  Jung-Chak Ahn ,  Yi-Tae Kim ,  Young-Chan Kim ,  Hae-Kyung Kong

    IPC分类号： H04N3/14

    CPC分类号： H01L27/14645 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14641 ,  H01L27/14656 ,  H04N5/347 ,  H04N5/37457

    摘要： Example embodiments may provide a CMOS image sensor. The CMOS image sensor may include a plurality of unit blocks each including two unit pixels. Each unit block may include two photodiodes having a hexagonal shape, a floating diffusion shared by the two unit pixels, a first transfer transistor and a second transfer transistor between the floating diffusion and the two photodiodes, respectively, a reset transistor connected with the floating diffusion, a drive transistor with a gate connected with the floating diffusion, and/or a selection transistor connected to the drive transistor in series. Example embodiment CMOS image sensors may be used in digital cameras, mobile devices, computer cameras, or the like.

    摘要翻译： 示例性实施例可以提供CMOS图像传感器。 CMOS图像传感器可以包括多个单元块，每个单元块包括两个单位像素。 每个单元块可以包括具有六边形形状的两个光电二极管，由两个单位像素共享的浮动扩散，分别在浮动扩散和两个光电二极管之间的第一传输晶体管和第二传输晶体管，与浮动扩散器连接的复位晶体管 ，具有与浮动扩散连接的栅极的驱动晶体管和/或串联连接到驱动晶体管的选择晶体管。 示例性实施例CMOS图像传感器可以用于数码相机，移动设备，计算机照相机等。

    CMOS active pixel sensor and active pixel sensor array using fingered type source follower transistor
    6.
    发明申请
    CMOS active pixel sensor and active pixel sensor array using fingered type source follower transistor 有权

    公开(公告)号：US20060175538A1

    公开(公告)日：2006-08-10

    申请号：US11348125

    申请日：2006-02-06

    申请人： Young-Chan Kim ,  Yi-Tae Kim

    发明人： Young-Chan Kim ,  Yi-Tae Kim

    IPC分类号： H01L27/00

    CPC分类号： H01L27/14603

    摘要： A CMOS active pixel sensor includes a photodiode, a transmitting transistor, a reset transistor, a fingered type source follower transistor and a selecting transistor, where the photodiode generates charge in response to incident light, the transmitting transistor transmits the charge stored in the photodiode to a sensing node, the reset transistor, coupled to a power supply voltage, resets a voltage of the sensing node so that the sensing node has substantially a level of the power supply voltage, the fingered type source follower transistor amplifies the voltage of the sensing node, the selecting transistor transmits a voltage of a source electrode of the fingered type source follower transistor into an internal circuit in response to a selection signal, thus, the channel width of the source follower transistor may be increased, and the MOS device noise due to the source follower transistor may be reduced.

    Pixel circuit with reduced wiring
    7.
    发明授权
    Pixel circuit with reduced wiring 有权
    像素电路减少布线

    公开(公告)号：US07652707B2

    公开(公告)日：2010-01-26

    申请号：US11449326

    申请日：2006-06-08

    申请人： Young-Chan Kim ,  Tetsuo Asaba ,  Yi-Tae Kim

    发明人： Young-Chan Kim ,  Tetsuo Asaba ,  Yi-Tae Kim

    IPC分类号： H04N3/14 ,  H04N5/335 ,  H01L27/00

    CPC分类号： H01L27/14603 ,  H04N5/3741

    摘要： A pixel circuit of an image sensor includes a floating diffusion node and a reset transistor. The reset transistor is coupled between the floating diffusion node and a reset control signal node of another pixel circuit of the image sensor. A voltage applied on the reset control signal node of the other pixel circuit is a reset voltage transmitted to the floating diffusion node via the reset transistor.

    摘要翻译： 图像传感器的像素电路包括浮动扩散节点和复位晶体管。 复位晶体管耦合在浮动扩散节点和图像传感器的另一像素电路的复位控制信号节点之间。 施加在另一像素电路的复位控制信号节点上的电压是通过复位晶体管传输到浮动扩散节点的复位电压。

    CMOS active pixel sensor and active pixel sensor array using fingered type source follower transistor
    8.
    发明授权
    CMOS active pixel sensor and active pixel sensor array using fingered type source follower transistor 有权
    CMOS有源像素传感器和有源像素传感器阵列使用指法型源极跟随器晶体管

    公开(公告)号：US07525077B2

    公开(公告)日：2009-04-28

    申请号：US11348125

    申请日：2006-02-06

    申请人： Young-Chan Kim ,  Yi-Tae Kim

    发明人： Young-Chan Kim ,  Yi-Tae Kim

    IPC分类号： H01L27/00 ,  H01L31/062

    CPC分类号： H01L27/14603

    摘要： A CMOS active pixel sensor includes a photodiode, a transmitting transistor, a reset transistor, a fingered type source follower transistor and a selecting transistor, where the photodiode generates charge in response to incident light, the transmitting transistor transmits the charge stored in the photodiode to a sensing node, the reset transistor, coupled to a power supply voltage, resets a voltage of the sensing node so that the sensing node has substantially a level of the power supply voltage, the fingered type source follower transistor amplifies the voltage of the sensing node, the selecting transistor transmits a voltage of a source electrode of the fingered type source follower transistor into an internal circuit in response to a selection signal, thus, the channel width of the source follower transistor may be increased, and the MOS device noise due to the source follower transistor may be reduced.

    摘要翻译： CMOS有源像素传感器包括光电二极管，发射晶体管，复位晶体管，指型源极跟随器晶体管和选择晶体管，其中光电二极管响应于入射光产生电荷，发射晶体管将存储在光电二极管中的电荷传输到 耦合到电源电压的感测节点复位晶体管复位感测节点的电压，使得感测节点具有基本上电源电压的电平，手指型源极跟随器晶体管放大感测节点的电压 ，选择晶体管响应于选择信号将指状型源极跟随器晶体管的源电极的电压传输到内部电路中，因此源极跟随器晶体管的沟道宽度可能增加，并且由于 可以减小源极跟随器晶体管。

    Pixel circuit with reduced wiring
    9.
    发明申请
    Pixel circuit with reduced wiring 有权
    像素电路减少布线

    公开(公告)号：US20060278811A1

    公开(公告)日：2006-12-14

    申请号：US11449326

    申请日：2006-06-08

    申请人： Young-Chan Kim ,  Tetsuo Asaba ,  Yi-Tae Kim

    发明人： Young-Chan Kim ,  Tetsuo Asaba ,  Yi-Tae Kim

    IPC分类号： H01L27/00

    CPC分类号： H01L27/14603 ,  H04N5/3741

    摘要： A pixel circuit of an image sensor includes a floating diffusion node and a reset transistor. The reset transistor is coupled between the floating diffusion node and a reset control signal node of another pixel circuit of the image sensor. A voltage applied on the reset control signal node of the other pixel circuit is a reset voltage transmitted to the floating diffusion node via the reset transistor.

    摘要翻译： 图像传感器的像素电路包括浮动扩散节点和复位晶体管。 复位晶体管耦合在浮动扩散节点和图像传感器的另一像素电路的复位控制信号节点之间。 施加在另一像素电路的复位控制信号节点上的电压是通过复位晶体管传输到浮动扩散节点的复位电压。

    CMOS sensor array with a shared structure
    10.
    发明申请
    CMOS sensor array with a shared structure 有权
    CMOS传感器阵列具有共享结构

    公开(公告)号：US20060175536A1

    公开(公告)日：2006-08-10

    申请号：US11342010

    申请日：2006-01-26

    申请人： Young-Chan Kim ,  Yi-Tae Kim

    发明人： Young-Chan Kim ,  Yi-Tae Kim

    IPC分类号： H01L27/00

    CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/37457

    摘要： A CMOS sensor array includes a plurality of unit blocks. A unit block includes: N pairs of photo diode regions arranged in a first direction; 2N transfer transistors respectively corresponding to the photo diode regions, wherein each of the transfer transistors is formed at a corner of the corresponding photo diode region, and wherein for each pair of photo diode regions the two corresponding transfer transistors symmetrically oppose each other; N floating diffusion nodes, wherein each of the floating diffusion nodes is respectively arranged between a pair of photo diode regions, and wherein each of the floating diffusion nodes is shared by the two corresponding transfer transistors and the pair of photo diode regions; at least one metal line for coupling the floating diffusion nodes; a reset transistor for resetting a voltage of the floating diffusion nodes; a readout circuit including at least one transistor for sampling the floating diffusion node, wherein the reset transistor and the readout circuit are disposed between the pair of photo diode regions.

    摘要翻译： CMOS传感器阵列包括多个单元块。 单位块包括：沿第一方向布置的N对光电二极管区域; 分别对应于光电二极管区域的2N个转移晶体管，其中每个转移晶体管形成在相应的光电二极管区域的拐角处，并且其中对于每对光电二极管区域，两个对应的转移晶体管彼此对称地对置; N个浮动扩散节点，其中每个浮动扩散节点分别布置在一对光电二极管区域之间，并且其中每个浮动扩散节点由两个对应的传输晶体管和一对光电二极管区域共享; 用于耦合浮动扩散节点的至少一条金属线; 复位晶体管，用于复位浮动扩散节点的电压; 读出电路，包括用于对浮动扩散节点进行采样的至少一个晶体管，其中复位晶体管和读出电路设置在所述一对光电二极管区域之间。