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    Pixel driving circuit and method of driving the same
    1.
    发明申请
    Pixel driving circuit and method of driving the same 有权
    像素驱动电路及其驱动方法

    公开(公告)号：US20070029465A1

    公开(公告)日：2007-02-08

    申请号：US11435961

    申请日：2006-05-17

    申请人： Sung-Ho Choi ,  Yi-Tae Kim ,  Young-Chan Kim ,  Hae-Kyung Kong

    发明人： Sung-Ho Choi ,  Yi-Tae Kim ,  Young-Chan Kim ,  Hae-Kyung Kong

    IPC分类号： H01L27/00

    CPC分类号： H04N5/3741

    摘要： Contacts and/or a transistor are shared by neighboring pixel circuits in an image sensor. In addition, a common interconnect line provides common control signals for minimizing metal wiring. Such minimization of space for the shared contacts, transistor, and control signals enhances the fill factor of photodiodes in the image sensor.

    摘要翻译： 触点和/或晶体管由图像传感器中的相邻像素电路共享。 此外，公共互连线提供用于最小化金属布线的公共控制信号。 共享触点，晶体管和控制信号的这种空间最小化增强了图像传感器中光电二极管的填充系数。

    CMOS image sensor and image sensing method using the same
    2.
    发明授权
    CMOS image sensor and image sensing method using the same 有权
    CMOS图像传感器和图像感应方法使用相同

    公开(公告)号：US07825970B2

    公开(公告)日：2010-11-02

    申请号：US11826588

    申请日：2007-07-17

    申请人： Sung-Ho Choi ,  Jung-Chak Ahn ,  Yi-Tae Kim ,  Young-Chan Kim ,  Hae-Kyung Kong

    发明人： Sung-Ho Choi ,  Jung-Chak Ahn ,  Yi-Tae Kim ,  Young-Chan Kim ,  Hae-Kyung Kong

    IPC分类号： H04N3/14 ,  H04N5/335

    CPC分类号： H01L27/14645 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14641 ,  H01L27/14656 ,  H04N5/347 ,  H04N5/37457

    摘要： Example embodiments may provide a CMOS image sensor. The CMOS image sensor may include a plurality of unit blocks each including two unit pixels. Each unit block may include two photodiodes having a hexagonal shape, a floating diffusion shared by the two unit pixels, a first transfer transistor and a second transfer transistor between the floating diffusion and the two photodiodes, respectively, a reset transistor connected with the floating diffusion, a drive transistor with a gate connected with the floating diffusion, and/or a selection transistor connected to the drive transistor in series. Example embodiment CMOS image sensors may be used in digital cameras, mobile devices, computer cameras, or the like.

    摘要翻译： 示例性实施例可以提供CMOS图像传感器。 CMOS图像传感器可以包括多个单元块，每个单元块包括两个单位像素。 每个单元块可以包括具有六边形形状的两个光电二极管，由两个单位像素共享的浮动扩散，分别在浮动扩散和两个光电二极管之间的第一传输晶体管和第二传输晶体管，与浮动扩散器连接的复位晶体管 ，具有与浮动扩散连接的栅极的驱动晶体管和/或串联连接到驱动晶体管的选择晶体管。 示例性实施例CMOS图像传感器可以用于数码相机，移动设备，计算机照相机等。

    CMOS image sensor and image sensing method using the same
    3.
    发明申请
    CMOS image sensor and image sensing method using the same 有权
    CMOS图像传感器和图像感应方法使用相同

    公开(公告)号：US20080018765A1

    公开(公告)日：2008-01-24

    申请号：US11826588

    申请日：2007-07-17

    申请人： Sung-Ho Choi ,  Jung-Chak Ahn ,  Yi-Tae Kim ,  Young-Chan Kim ,  Hae-Kyung Kong

    发明人： Sung-Ho Choi ,  Jung-Chak Ahn ,  Yi-Tae Kim ,  Young-Chan Kim ,  Hae-Kyung Kong

    IPC分类号： H04N3/14

    CPC分类号： H01L27/14645 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14641 ,  H01L27/14656 ,  H04N5/347 ,  H04N5/37457

    摘要： Example embodiments may provide a CMOS image sensor. The CMOS image sensor may include a plurality of unit blocks each including two unit pixels. Each unit block may include two photodiodes having a hexagonal shape, a floating diffusion shared by the two unit pixels, a first transfer transistor and a second transfer transistor between the floating diffusion and the two photodiodes, respectively, a reset transistor connected with the floating diffusion, a drive transistor with a gate connected with the floating diffusion, and/or a selection transistor connected to the drive transistor in series. Example embodiment CMOS image sensors may be used in digital cameras, mobile devices, computer cameras, or the like.

    摘要翻译： 示例性实施例可以提供CMOS图像传感器。 CMOS图像传感器可以包括多个单元块，每个单元块包括两个单位像素。 每个单元块可以包括具有六边形形状的两个光电二极管，由两个单位像素共享的浮动扩散，分别在浮动扩散和两个光电二极管之间的第一传输晶体管和第二传输晶体管，与浮动扩散器连接的复位晶体管 ，具有与浮动扩散连接的栅极的驱动晶体管和/或串联连接到驱动晶体管的选择晶体管。 示例性实施例CMOS图像传感器可以用于数码相机，移动设备，计算机照相机等。

    Pixels for CMOS image sensors
    5.
    发明申请
    Pixels for CMOS image sensors 审中-公开
    CMOS图像传感器的像素

    公开(公告)号：US20060261431A1

    公开(公告)日：2006-11-23

    申请号：US11436278

    申请日：2006-05-18

    申请人： Yi-Tae Kim ,  Young-Chan Kim ,  Hae-Kyung Kong ,  Sung-Ho Choi

    发明人： Yi-Tae Kim ,  Young-Chan Kim ,  Hae-Kyung Kong ,  Sung-Ho Choi

    IPC分类号： H01L31/06

    CPC分类号： H01L27/14609 ,  H04N5/3559 ,  H04N5/3597 ,  H04N5/3745 ,  H04N5/37457

    摘要： A unit pixel of a complementary metal-oxide semiconductor (CMOS) image sensor includes a photoelectric conversion element, a transfer transistor, a boosting capacitor and a signal transfer circuit, where the photoelectric conversion element generates a charge based on incident light, the transfer transistor transfers the charge to a floating diffusion node in response to a transfer control signal, the boosting capacitor is disposed between a gate of the transfer transistor and the floating diffusion node, the signal transfer circuit transfers an electric potential of the floating diffusion node in response to a selection signal, and a dynamic range of the electric potential of the floating diffusion node may be widened and a drain-source voltage difference of the transfer transistor may be increased so that the charge transfer efficiency may be enhanced.

    摘要翻译： 互补金属氧化物半导体（CMOS）图像传感器的单位像素包括光电转换元件，转移晶体管，升压电容器和信号传输电路，其中光电转换元件基于入射光产生电荷，转移晶体管 响应于转移控制信号将电荷转移到浮动扩散节点，升压电容器设置在转移晶体管的栅极和浮动扩散节点之间，信号传输电路响应于 可以加宽选择信号和浮动扩散节点的电位的动态范围，并且可以增加转移晶体管的漏极 - 源极电压差，从而可以提高电荷转移效率。

    Signal charge converter for charge transfer element
    6.
    发明申请
    Signal charge converter for charge transfer element 审中-公开
    用于电荷转移元件的信号电荷转换器

    公开(公告)号：US20050127457A1

    公开(公告)日：2005-06-16

    申请号：US10874042

    申请日：2004-06-22

    申请人： Jae-Seob Roh ,  Jung-Hyun Nam ,  Jeong-Ho Lyu ,  Duck-Hyung Lee ,  Hae-Kyung Kong ,  Yi-Tae Kim

    发明人： Jae-Seob Roh ,  Jung-Hyun Nam ,  Jeong-Ho Lyu ,  Duck-Hyung Lee ,  Hae-Kyung Kong ,  Yi-Tae Kim

    IPC分类号： H01L27/148 ,  H01L29/76

    CPC分类号： H01L27/14812

    摘要： A signal converter, for converting signal charge into a voltage, comprises a first driver FET for a first stage that receives the signal charge. A subsequent driver FET is coupled to an output of the first driver FET, and a gate dielectric thickness of the subsequent driver FET is decreased. The subsequent driver FET is either for a second stage or for a third stage. The decrease of the gate dielectric thickness for the subsequent driver FET increases the voltage gain AVtotal without decreasing the charge transfer efficiency such that the overall sensitivity of the signal converter is enhanced.

    摘要翻译： 用于将信号电荷转换为电压的信号转换器包括用于接收信号电荷的第一级的第一驱动器FET。 随后的驱动器FET耦合到第一驱动器FET的输出，并且随后的驱动器FET的栅介质厚度减小。 随后的驱动器FET是第二级或第三级。 随后的驱动器FET的栅极电介质厚度的减小增加了电压增益AV总计，而不降低电荷转移效率，使得信号转换器的总体灵敏度增强。

    METHOD AND DEVICE OF MEASURING THE DISTANCE TO AN OBJECT
    7.
    发明申请
    METHOD AND DEVICE OF MEASURING THE DISTANCE TO AN OBJECT 有权
    测量对象距离的方法和设备

    公开(公告)号：US20140002636A1

    公开(公告)日：2014-01-02

    申请号：US13893812

    申请日：2013-05-14

    申请人： Han-Soo Lee ,  Hae-Kyung Kong ,  Kyung-IL Kim ,  Min-Seok Oh ,  Tae-Chan Kim ,  Moo-Sup Lim

    发明人： Han-Soo Lee ,  Hae-Kyung Kong ,  Kyung-IL Kim ,  Min-Seok Oh ,  Tae-Chan Kim ,  Moo-Sup Lim

    IPC分类号： G01C3/08

    CPC分类号： G01S17/36 ,  G01C3/08

    摘要： To measure the distance to points on an object by radiating a periodic amplitude-modulated optical signal to the object and detecting the phase difference between the radiated optical signal and a reflected optical signal from the object, a first photo-detection control signal is generated to control the radiation of the optical signal. A mask signal is generated such that the mask signal is activated at least during a shuttering duration for resetting the voltage level at a sensing node (associated with an operation of a previous frame). A second photo-detection control signal is generated based on the first photo-detection signal and the mask signal such that the second photo-detection signal is deactivated or masked at least during the shuttering duration.

    摘要翻译： 为了通过向对象辐射周期性幅度调制的光信号并检测辐射光信号与来自对象的反射光信号之间的相位差来测量物体上与点的距离，产生第一光检测控制信号 控制光信号的辐射。 产生掩模信号，使得至少在用于复位感测节点处的电压电平（与先前帧的操作相关联）的快门持续时间期间激活屏蔽信号。 基于第一光检测信号和掩模信号产生第二光检测控制信号，使得至少在快门持续时间期间第二光检测信号被去激活或屏蔽。

    Depth pixel included in three-dimensional image sensor and three-dimensional image sensor including the same
    8.
    发明授权
    Depth pixel included in three-dimensional image sensor and three-dimensional image sensor including the same 有权
    包括在三维图像传感器中的深度像素和包括其的三维图像传感器

    公开(公告)号：US09324758B2

    公开(公告)日：2016-04-26

    申请号：US14077602

    申请日：2013-11-12

    申请人： Min-Seok Oh ,  Hae-Kyung Kong ,  Tae Chan Kim ,  Jung Chak Ahn ,  Moo Sup Lim

    发明人： Min-Seok Oh ,  Hae-Kyung Kong ,  Tae Chan Kim ,  Jung Chak Ahn ,  Moo Sup Lim

    IPC分类号： H01L31/062 ,  H01L27/146

    CPC分类号： H01L27/14643 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14641

    摘要： A depth pixel includes a photo detection region, first and second photo gates and first and second floating diffusion regions. The photo detection region collects photo charges based on light reflected by an object. The collected photo charges are drifted in a first direction and a second direction different from the first direction based on an internal electric field in the photo detection region. The first photo gate is activated in response to a first photo control signal. The first floating diffusion region accumulates first photo charges drifted in the first direction if the first photo gate is activated. The second photo gate is activated in response to the first photo control signal. The second floating diffusion region accumulates second photo charges drifted in the second direction if the second photo gate is activated.

    摘要翻译： 深度像素包括光检测区域，第一和第二光栅以及第一和第二浮动扩散区域。 光检测区域根据由物体反射的光来收集照片费用。 所收集的光电荷基于光检测区域中的内部电场在与第一方向不同的第一方向和第二方向漂移。 响应于第一光控制信号激活第一光栅。 如果第一光栅被激活，则第一浮动扩散区积累在第一方向漂移的第一光电荷。 响应于第一光控制信号激活第二光栅。 如果第二光栅被激活，则第二浮动扩散区积累在第二方向漂移的第二光电荷。