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1.发明授权Photo mask set for forming multi-layered interconnection lines and semiconductor device fabricated using the same 有权用于形成多层互连线的光掩模组和使用其形成的半导体器件公开(公告)号：US08103976B2
公开(公告)日：2012-01-24
申请号：US11839478
申请日：2007-08-15
申请人： Sung-Jin Kim , Seung-Hyun Chang , Ki-Heum Nam
发明人： Sung-Jin Kim , Seung-Hyun Chang , Ki-Heum Nam
IPC分类号： G06F17/50
摘要： A photo mask set for forming multi-layered interconnection lines and a semiconductor device fabricated using the same includes a first photo mask for forming lower interconnection lines and a second photo mask for forming upper interconnection lines. The first and second photo masks have lower opaque patterns parallel with each other and upper opaque patterns that overlap the lower opaque patterns. In this case, ends of the lower opaque patterns are located on a straight line that crosses the lower opaque patterns. As a result, when upper interconnection lines are formed using the second photo mask, poor photo resist patterns can be prevented from being formed despite the focusing of reflected light.
摘要翻译： 用于形成多层互连线的光掩模组和使用其形成的半导体器件包括用于形成下互连线的第一光掩模和用于形成上互连线的第二光掩模。 第一和第二光掩模具有彼此平行的较低的不透明图案和与下部不透明图案重叠的上部不透明图案。 在这种情况下，下部不透明图案的端部位于与下部不透明图案交叉的直线上。 结果，当使用第二光掩模形成上互连线时，即使反射光聚焦，也可以防止形成差的光刻胶图形。
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2.发明授权Photo mask set for forming multi-layered interconnection lines and semiconductor device fabricated using the same 有权用于形成多层互连线的光掩模组和使用其形成的半导体器件公开(公告)号：US07271492B2
公开(公告)日：2007-09-18
申请号：US10685655
申请日：2003-10-14
申请人： Sung-Jin Kim , Seung-Hyun Chang , Ki-Heum Nam
发明人： Sung-Jin Kim , Seung-Hyun Chang , Ki-Heum Nam
摘要： A photo mask set for forming multi-layered interconnection lines and a semiconductor device fabricated using the same includes a first photo mask for forming lower interconnection lines and a second photo mask for forming upper interconnection lines. The first and second photo masks have lower opaque patterns parallel with each other and upper opaque patterns that overlap the lower opaque patterns. In this case, ends of the lower opaque patterns are located on a straight line that crosses the lower opaque patterns. As a result, when upper interconnection lines are formed using the second photo mask, poor photo resist patterns can be prevented from being formed despite the focusing of reflected light.
摘要翻译： 用于形成多层互连线的光掩模组和使用其形成的半导体器件包括用于形成下互连线的第一光掩模和用于形成上互连线的第二光掩模。 第一和第二光掩模具有彼此平行的较低的不透明图案和与下部不透明图案重叠的上部不透明图案。 在这种情况下，下部不透明图案的端部位于与下部不透明图案交叉的直线上。 结果，当使用第二光掩模形成上互连线时，即使反射光聚焦，也可以防止形成差的光刻胶图形。
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