Method for acquiring overshoot voltage and analyzing degradation of a gate insulation using the same
    1.
    发明申请
    Method for acquiring overshoot voltage and analyzing degradation of a gate insulation using the same 有权
    用于获取过冲电压并分析其使用栅极绝缘的劣化的方法

    公开(公告)号:US20100088660A1

    公开(公告)日:2010-04-08

    申请号:US12585948

    申请日:2009-09-29

    IPC分类号: G06F17/50 G01R19/00

    CPC分类号: G01R31/2623

    摘要: A method of acquiring an overshoot voltage applied to a transistor includes determining a first extraction value, the first extraction value including a product of acceleration factors determined in a test of the transistor, determining an applied time, the applied time corresponding to a length of time a voltage deviates from a predetermined level of an input voltage in a circuit employing the transistor, determining a second extraction value by dividing the first extraction value by the applied time, and determining the overshoot voltage by multiplying the second extraction value by the input voltage.

    摘要翻译: 获取施加到晶体管的过冲电压的方法包括确定第一提取值,第一提取值包括在晶体管的测试中确定的加速度因子的乘积,确定施加的时间,对应于时间长度的施加时间 电压偏离了采用晶体管的电路中的输入电压的预定电平,通过将第一提取值除以施加时间来确定第二提取值,并且通过将第二提取值乘以输入电压来确定过冲电压。

    Method for acquiring overshoot voltage and analyzing degradation of a gate insulation using the same
    2.
    发明授权
    Method for acquiring overshoot voltage and analyzing degradation of a gate insulation using the same 有权
    用于获取过冲电压并分析其使用栅极绝缘的劣化的方法

    公开(公告)号:US08266572B2

    公开(公告)日:2012-09-11

    申请号:US12585948

    申请日:2009-09-29

    IPC分类号: G06F17/50

    CPC分类号: G01R31/2623

    摘要: A method of acquiring an overshoot voltage applied to a transistor includes determining a first extraction value, the first extraction value including a product of acceleration factors determined in a test of the transistor, determining an applied time, the applied time corresponding to a length of time a voltage deviates from a predetermined level of an input voltage in a circuit employing the transistor, determining a second extraction value by dividing the first extraction value by the applied time, and determining the overshoot voltage by multiplying the second extraction value by the input voltage.

    摘要翻译: 获取施加到晶体管的过冲电压的方法包括确定第一提取值,第一提取值包括在晶体管的测试中确定的加速度因子的乘积,确定施加的时间,对应于时间长度的施加时间 电压偏离了采用晶体管的电路中的输入电压的预定电平,通过将第一提取值除以施加时间来确定第二提取值,并且通过将第二提取值乘以输入电压来确定过冲电压。