摘要:
A method of forming a pattern for a semiconductor device includes forming first pattern data, forming second pattern data, forming third pattern data, forming pattern density measurement data including the first, second, and third pattern data, measuring a pattern density of the pattern density measurement data, adjusting shapes of patterns in the third pattern data based on a comparison of the measured density value and a reference density so as to form fourth pattern data, and forming final pattern data including the first, second, and fourth pattern data.