公开(公告)号：US20180083573A1

公开(公告)日：2018-03-22

申请号：US15392527

申请日：2016-12-28

申请人： Svetozar Broussev ,  Andreas Jörn Leistner ,  Andreas Roithmeier ,  Thomas Gustedt

发明人： Svetozar Broussev ,  Andreas Jörn Leistner ,  Andreas Roithmeier ,  Thomas Gustedt

IPC分类号： H03B5/12

CPC分类号： H03B5/1243 ,  H03B5/1215 ,  H03B5/1228 ,  H03B5/1265

摘要： Various designs for MOS transistor-based RF switch topologies for high speed capacitive tuning of oscillators switch circuits include a main switch device comprising a gate connected to a control terminal, a drain connected to a first terminal that is connected to the first capacitor, and a source connected to a second terminal that is connected to the second capacitor. The switch further comprises a first NMOS device having a gate connected to the main switch device gate, a source connected to a ground, and a drain connected to the first terminal. The switch further comprises a second NMOS device having a gate connected to the main switch device gate, a source connected to a ground, and a drain connected to the second terminal. The switch further comprises a pair of PMOS devices each having drains connected respectively to the first and second terminals.