公开(公告)号：US10453741B2

公开(公告)日：2019-10-22

申请号：US15486185

申请日：2017-04-12

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Cheng-Chien Huang ,  Tsung-Yu Chiang

IPC分类号： H01L21/768 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  H01L21/285

摘要： A method of making a semiconductor device includes forming a gate stack that include a gate electrode and a spacer layer extending along a sidewall of the gate electrode; forming a source/drain (S/D) feature that is adjacent to the gate stack; forming a dielectric layer over the gate stack and the S/D feature; forming a contact hole in the dielectric layer to expose the S/D feature, wherein the contact hole includes a first sidewall that is formed by the spacer layer and part of the dielectric layer; doping an upper portion of the first sidewall; and performing an etching process thereby cleaning oxides in the contact hole.

公开(公告)号：US20170069621A1

公开(公告)日：2017-03-09

申请号：US14990603

申请日：2016-01-07

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Cheng-Chien Huang ,  Chi-Wen Liu ,  Horng-Huei Tseng ,  Tsung-Yu Chiang

IPC分类号： H01L27/06 ,  H01L29/06 ,  H01L49/02 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/66 ,  H01L21/306 ,  H01L21/762 ,  H01L29/78 ,  H01L23/528

CPC分类号： H01L27/0629 ,  H01L21/30604 ,  H01L21/76224 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L23/528 ,  H01L28/24 ,  H01L29/0611 ,  H01L29/0653 ,  H01L29/42364 ,  H01L29/6681 ,  H01L29/785

摘要： A semiconductor device includes a FinFET component, a plurality of patterned dummy semiconductor fins arranged aside a plurality of fins of the FinFET component, an isolation structure formed on the patterned dummy semiconductor fins, and a tuning component formed on the patterned dummy semiconductor fins and electrically connected to the FinFET component. A height of the patterned dummy semiconductor fins is shorter than that of the fins of the FinFET component.

摘要翻译： 半导体器件包括FinFET部件，布置在FinFET部件的多个鳍片上的多个图案化虚拟半导体鳍片，形成在图案化虚拟半导体鳍片上的隔离结构以及形成在图案化虚拟半导体鳍片上的调谐组件， 连接到FinFET组件。 图案化虚拟半导体鳍片的高度比FinFET部件的鳍片的高度短。

公开(公告)号：US20210280575A1

公开(公告)日：2021-09-09

申请号：US17327071

申请日：2021-05-21

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Cheng-Chien Huang ,  Chi-Wen Liu ,  Horng-Huei Tseng ,  Tsung-Yu Chiang

IPC分类号： H01L27/06 ,  H01L29/78 ,  H01L29/06 ,  H01L49/02 ,  H01L23/528 ,  H01L29/423 ,  H01L29/66 ,  H01L21/306 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088

摘要： A semiconductor device includes a FinFET component, a plurality of patterned dummy semiconductor fins arranged aside a plurality of fins of the FinFET component, an isolation structure formed on the patterned dummy semiconductor fins, and a tuning component formed on the patterned dummy semiconductor fins and electrically connected to the FinFET component. A height of the patterned dummy semiconductor fins is shorter than that of the fins of the FinFET component.

公开(公告)号：US10050030B2

公开(公告)日：2018-08-14

申请号：US14990603

申请日：2016-01-07

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Cheng-Chien Huang ,  Chi-Wen Liu ,  Horng-Huei Tseng ,  Tsung-Yu Chiang

IPC分类号： H01L27/06 ,  H01L21/8238 ,  H01L21/762 ,  H01L21/306 ,  H01L49/02 ,  H01L29/423 ,  H01L23/528 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8234

摘要： A semiconductor device includes a FinFET component, a plurality of patterned dummy semiconductor fins arranged aside a plurality of fins of the FinFET component, an isolation structure formed on the patterned dummy semiconductor fins, and a tuning component formed on the patterned dummy semiconductor fins and electrically connected to the FinFET component. A height of the patterned dummy semiconductor fins is shorter than that of the fins of the FinFET component.