专利检索 ap:("TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.") AND inv:"Nai-Chao SU" 第 1 页

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发明申请
MEMORY DEVICE AND FABRICATION THEREOF 审中-公开

公开(公告)号：US20190164602A1

公开(公告)日：2019-05-30

申请号：US15870620

申请日：2018-01-12

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Kuo-Chi TU , Chu-Jie HUANG , Sheng-Hung SHIH , Nai-Chao SU , Wen-Ting CHU

IPC分类号： G11C13/00 , H01L21/02

摘要： A memory device includes a bottom electrode, a resistance switching layer and a top electrode. The bottom electrode is over a metallization layer embedded in an inter-metal dielectric layer. The bottom electrode has a top surface and a sidewall that extends at an obtuse angle relative to the top surface. The resistance switching layer is over the bottom electrode. The top electrode is over the resistance switching layer.