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公开(公告)号：US20200381287A1
公开(公告)日：2020-12-03
申请号：US16994400
申请日：2020-08-14
发明人： Yen-Yu CHEN , Wei-Jen CHEN , Yi-Chen CHIANG , Tsang-Yang LIU , Chang-Sheng LEE , Wei-Chen LIAO , Wei ZHANG
IPC分类号： H01L21/687
摘要： An apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.
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公开(公告)号：US20190139810A1
公开(公告)日：2019-05-09
申请号：US16230765
申请日：2018-12-21
发明人： Yen-Yu CHEN , Wei-Jen CHEN , Yi-Chen CHIANG , Tsang-Yang LIU , Chang-Sheng LEE , Wei-Chen LIAO , Wei ZHANG
IPC分类号： H01L21/687
CPC分类号： H01L21/68742
摘要： A apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.
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