公开(公告)号：US20230067563A1

公开(公告)日：2023-03-02

申请号：US17461152

申请日：2021-08-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chia-Wei SU ,  Chia-Tien WU ,  Hsin-Ping CHEN ,  Shau-Lin SHUE

IPC分类号： H01L23/532 ,  H01L23/528 ,  H01L21/311 ,  H01L21/768

摘要： A method for manufacturing a semiconductor structure includes forming a plurality of dummy structures spaced apart from each other, forming a plurality of dielectric spacers laterally covering the dummy structures to form a plurality of trenches defined by the dielectric spacers, filling an conductive material into the trenches to form electrically conductive features, selectively depositing a capping material on the electrically conductive features to form a capping layer, removing the dummy structures to form a plurality of recesses defined by the dielectric spacers, filling a sacrificial material into the recesses so as to form sacrificial features, depositing a sustaining layer on the sacrificial features, and removing the sacrificial features to form air gaps confined by the sustaining layer and the dielectric spacers.

公开(公告)号：US20230067527A1

公开(公告)日：2023-03-02

申请号：US17460859

申请日：2021-08-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Wei-Chen CHU ,  Chia-Tien WU ,  Chia-Wei SU ,  Yu-Chieh LIAO ,  Chia-Chen LEE ,  Hsin-Ping CHEN ,  Shau-Lin SHUE

IPC分类号： H01L23/522 ,  H01L23/532 ,  H01L21/768

摘要： A semiconductor structure includes a substrate, a dielectric layer, a first conductive feature and a second conductive feature. The substrate includes a semiconductor device. The dielectric layer is disposed on the substrate. The first conductive feature is formed in the first dielectric layer. The second conductive feature penetrates the first conductive feature and the dielectric layer, and is electrically connected to the first conductive feature and the semiconductor device.