公开(公告)号：US20220285224A1

公开(公告)日：2022-09-08

申请号：US17752080

申请日：2022-05-24

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Ming-Heng TSAI ,  Chun-Sheng LIANG ,  Pei-Lin WU ,  Yi-Ren CHEN ,  Shih-Hsun CHANG

IPC分类号： H01L21/8238 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/161 ,  H01L29/165 ,  H01L29/16 ,  H01L29/24 ,  H01L29/267 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78

摘要： A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a gate stack over the substrate. The semiconductor device structure includes a spacer over a side of the gate stack. The semiconductor device structure includes a dielectric layer over the substrate. The dielectric layer has a first recess, the dielectric layer has an upper portion and a first lower portion, the upper portion is over the first recess, the first recess is between the first lower portion and the spacer, and the upper portion has a convex curved sidewall.