公开(公告)号：US12114412B2

公开(公告)日：2024-10-08

申请号：US18228206

申请日：2023-07-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Yen-Shuo Su ,  Jen-Hao Yeh ,  Jhan-Hong Yeh ,  Ting-Ya Cheng ,  Henry Yee Shian Tong ,  Chun-Lin Chang ,  Han-Lung Chang ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00 ,  G01V8/12

CPC classification number: H05G2/008 ,  G01V8/12 ,  H05G2/005

Abstract: A method for monitoring a shock wave in an extreme ultraviolet light source includes irradiating a target droplet in the extreme ultraviolet light source apparatus of an extreme ultraviolet lithography tool with ionizing radiation to generate a plasma and to detect a shock wave generated by the plasma. One or more operating parameters of the extreme ultraviolet light source is adjusted based on the detected shock wave.

公开(公告)号：US12133319B2

公开(公告)日：2024-10-29

申请号：US17562819

申请日：2021-12-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Ting-Ya Cheng ,  Chun-Lin Chang ,  Li-Jui Chen ,  Han-Lung Chang

IPC: H05G2/00 ,  G02B7/185 ,  G02B26/06 ,  G02B26/08 ,  G02B27/09 ,  G03F7/00

CPC classification number: H05G2/008 ,  G02B7/185 ,  G02B26/06 ,  G02B26/0858 ,  G02B27/0933 ,  G02B27/0977 ,  G03F7/70033 ,  H05G2/005

Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. A deformable mirror is disposed in a path of the excitation laser. A controller is configured to adjust parameters of the excitation laser by controlling the deformable mirror based on a feedback parameter.

公开(公告)号：US11860544B2

公开(公告)日：2024-01-02

申请号：US17751545

申请日：2022-05-23

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Ting-Ya Cheng ,  Han-Lung Chang ,  Shi-Han Shann ,  Li-Jui Chen ,  Yen-Shuo Su

IPC: G03F7/20 ,  G02B7/182 ,  H05G2/00 ,  G03F7/00

CPC classification number: G03F7/70033 ,  G02B7/182 ,  G03F7/7055 ,  H05G2/006 ,  H05G2/008

Abstract: A method of controlling an extreme ultraviolet (EUV) lithography system is disclosed. The method includes irradiating a target droplet with EUV radiation, detecting EUV radiation reflected by the target droplet, determining aberration of the detected EUV radiation, determining a Zernike polynomial corresponding to the aberration, and performing a corrective action to reduce a shift in Zernike coefficients of the Zernike polynomial.

公开(公告)号：US11800626B2

公开(公告)日：2023-10-24

申请号：US17874278

申请日：2022-07-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Yen-Shuo Su ,  Jen-Hao Yeh ,  Jhan-Hong Yeh ,  Ting-Ya Cheng ,  Henry Yee Shian Tong ,  Chun-Lin Chang ,  Han-Lung Chang ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00 ,  G01V8/12

CPC classification number: H05G2/008 ,  G01V8/12 ,  H05G2/005

Abstract: A method for monitoring a shock wave in an extreme ultraviolet light source includes irradiating a target droplet in the extreme ultraviolet light source apparatus of an extreme ultraviolet lithography tool with ionizing radiation to generate a plasma and to detect a shock wave generated by the plasma. One or more operating parameters of the extreme ultraviolet light source is adjusted based on the detected shock wave.