公开(公告)号：US20230386964A1

公开(公告)日：2023-11-30

申请号：US17829243

申请日：2022-05-31

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chang-Jung HSUEH ,  Yen Wei CHANG ,  Cheng-Nan LIN ,  Wei-Hung LIN ,  Ming-Da CHENG

IPC分类号： H01L23/373 ,  H01L21/285 ,  H01L21/02

CPC分类号： H01L23/3736 ,  H01L21/2855 ,  H01L21/02052

摘要： In a method of forming a heat dissipating structure for a semiconductor chip, a soldering material is disposed on a top surface of the semiconductor chip. A first region of metal plating is formed on a surface of a lid. The first region has a first width and a first length. The first width is larger than a second width of the top surface of the semiconductor chip and the first length is larger than a second length of the top surface of the semiconductor chip. The lid is placed over the semiconductor chip so that the first region of metal plating of the lid is disposed over the soldering material to bond the lid to the semiconductor chip by a soldering material layer having an inverted trapezoidal shape between the lid and the top surface of the semiconductor chip.