公开(公告)号：US11569164B2

公开(公告)日：2023-01-31

申请号：US16880336

申请日：2020-05-21

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Wen-Sheng Chen ,  An-Hsun Lo ,  En-Hsiang Yeh ,  Tzu-Jin Yeh

IPC: H01L23/522 ,  H01L49/02

Abstract: A semiconductor device includes: a polygonal inductive device disposed on a first layer on a substrate, the polygonal inductive device including a first line portion; a first conductive line disposed on a second layer on the substrate; a second conductive line disposed on a third layer on the substrate; and a first conductive via arranged to electrically couple the second conductive line to the first conductive line; wherein the first layer is different from the second layer and the third layer, the first conductive line is electrically connected to a reference voltage, and the first conductive line crosses the first line portion viewing from a top of the semiconductor device.

公开(公告)号：US10672704B2

公开(公告)日：2020-06-02

申请号：US15965618

申请日：2018-04-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Wen-Sheng Chen ,  An-Hsun Lo ,  En-Hsiang Yeh ,  Tzu-Jin Yeh

IPC: H01L23/522 ,  H01L49/02

Abstract: A semiconductor device includes: a polygonal inductive device disposed on a first layer on a substrate, the polygonal inductive device including a first line portion; a first conductive line disposed on a second layer on the substrate; a second conductive line disposed on a third layer on the substrate; and a first conductive via arranged to electrically couple the second conductive line to the first conductive line; wherein the first layer is different from the second layer and the third layer, the first conductive line is electrically connected to a reference voltage, and the first conductive line crosses the first line portion viewing from a top of the semiconductor device.