公开(公告)号：US20230369397A1

公开(公告)日：2023-11-16

申请号：US18226192

申请日：2023-07-25

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPAY, LTD.

发明人： Matthias PASSLACK ,  Marcus Johannes Henricus VAN DAL ,  Timothy VASEN ,  Georgios VELLIANITIS

IPC分类号： H01L29/06 ,  H01L29/78 ,  H01L21/02 ,  H01L29/66 ,  H01L29/08

CPC分类号： H01L29/0673 ,  H01L29/785 ,  H01L21/02181 ,  H01L21/0217 ,  H01L29/66795 ,  H01L21/02164 ,  H01L21/02178 ,  H01L29/66545 ,  H01L29/0847

摘要： In a method of forming a gate-all-around field effect transistor (GAA FET), a fin structure is formed. The fin structure includes a plurality of stacked structures each comprising a dielectric layer, a CNT over the dielectric layer, a support layer over the CNT. A sacrificial gate structure is formed over the fin structure, an isolation insulating layer is formed, a source/drain opening is formed by patterning the isolation insulating layer, the support layer is removed from each of the plurality of stacked structures in the source/drain opening, and a source/drain contact layer is formed in the source/drain opening. The source/drain contact is formed such that the source/drain contact is in direct contact with only a part of the CNT and a part of the dielectric layer is disposed between the source/drain contact and the CNT.