公开(公告)号：US20250059642A1

公开(公告)日：2025-02-20

申请号：US18938069

申请日：2024-11-05

Applicant: TANAKA KIKINZOKU KOGYO K.K.

Inventor： Kazuharu SUZUKI ,  Yuki Mori ,  Subhabrata Das ,  Hirofumi Nakagawa ,  Shunichi Nabeya

IPC: C23C16/18 ,  C07C49/12 ,  C07F15/00 ,  C23C16/448

Abstract: The present invention is drawn to a raw material for chemical deposition for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, containing an organoruthenium compound represented by the following formula 1, and further containing β-diketone that is the same as a ligand of the organoruthenium compound. The raw material for chemical deposition of the present invention is inhibited in discoloration/precipitation even when heated at a high temperature, and enables to form a stable ruthenium thin film or ruthenium compound thin film. wherein substituents R1 and R2 are each hydrogen, or a linear or branched alkyl group.