公开(公告)号：US20140242728A1

公开(公告)日：2014-08-28

申请号：US13777352

申请日：2013-02-26

Applicant: TDK CORPORATION

Inventor： Hitoshi HATATE ,  Atsuyoshi TSUNODA ,  Makoto FUKUI ,  Shuji OKAME ,  Ken FUJII

IPC: H01L43/12

CPC classification number: H01L43/12 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3909 ,  G11B2005/3996

Abstract: A magnetoresistive device includes an MR element including a metal layer, and an insulating portion made of magnesium oxide and in contact with the MR element. A method of manufacturing the magnetoresistive device includes the step of removing an unwanted magnesium oxide film that is formed by the magnesium oxide in the process of forming the insulating portion. In this step, the unwanted magnesium oxide film is wet etched by using an etchant containing an aqueous ammonia solution.

Abstract translation: 磁阻器件包括包括金属层的MR元件和由氧化镁制成并与MR元件接触的绝缘部分。 制造磁阻器件的方法包括在形成绝缘部分的过程中除去由氧化镁形成的不想要的氧化镁膜的步骤。 在该步骤中，通过使用含有氨水溶液的蚀刻剂湿法蚀刻不需要的氧化镁膜。