公开(公告)号：US20130257540A1

公开(公告)日：2013-10-03

申请号：US13852159

申请日：2013-03-28

Applicant: TDK CORPORATION

Inventor： Tomihiko SHIBUYA ,  Atsushi AJIOKA ,  Atsushi TSUMITA

IPC: H03F3/19

CPC classification number: H03F3/19 ,  H01L23/66 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A high frequency amplifier is characterized wherein a power amplification element and at least one of temperature compensation elements are adjacently provided on a first semiconductor layer, a first wiring pattern connected to the power amplification element, a second wiring pattern connected to the temperature compensation element, and a ground electrode are provided on at least one of second semiconductor layers existing in layers different from the first semiconductor layer, and the ground electrode is formed on the second semiconductor layer corresponding to a region that substantially projects a crevice part on which the temperature compensation element and the power amplification element are provided, on the same plane as the first semiconductor element.

Abstract translation: 一种高频放大器，其特征在于，功率放大元件和温度补偿元件中的至少一个相邻地设置在第一半导体层上，连接到功率放大元件的第一布线图案，连接到温度补偿元件的第二布线图案， 并且在与第一半导体层不同的层中存在的第二半导体层中的至少一个上设置接地电极，并且在第二半导体层上形成接地电极，所述第二半导体层对应于基本上突出有温度补偿的缝隙部分的区域 元件和功率放大元件设置在与第一半导体元件相同的平面上。