Thin film ferroelectric device
    1.
    发明授权
    Thin film ferroelectric device 失效
    薄膜电热器件

    公开(公告)号:US3728694A

    公开(公告)日:1973-04-17

    申请号:US3728694D

    申请日:1970-09-28

    申请人: TECHNOVATION

    发明人: ROHRER G

    IPC分类号: H01G7/02 G11C11/22

    CPC分类号: H01G7/02 H01G7/025

    摘要: A ferroelectric device having a layer of stable ferroelectric potassium nitrate disposed between electrical contacts positioned on opposite surfaces of the ferroelectric layer. The ferroelectric layer has a thickness of less than 110 microns, and preferably falling within a range of from 100 angstrom units to 1000 angstrom units. The process of manufacturing the ferroelectric device includes the cooling of a layer of potassium nitrate by exposing the layer to a cold dry gas without quenching to form a stable ferroelectric layer.

    摘要翻译: 具有设置在位于铁电层的相对表面上的电触点之间的具有稳定的铁电硝酸钾层的铁电体元件。 铁电层的厚度小于110微米,优选在100埃至1000埃的范围内。 制造铁电体器件的过程包括通过将层暴露于冷干燥气体而不淬火以形成稳定的铁电层来冷却硝酸钾层。