公开(公告)号：US20220123526A1

公开(公告)日：2022-04-21

申请号：US17384135

申请日：2021-07-23

Applicant: TeraXion Inc.

Inventor： Sylvain BOUDREAU ,  Keven BÉDARD ,  Michel MORIN ,  François COSTIN ,  André BABIN ,  Simon AYOTTE

IPC: H01S5/32 ,  H01S5/125 ,  H01S5/065

Abstract: A semiconductor laser comprising a single mode laser cavity having a stack of semiconducting layers defining a transversal p-n junction is provided. A plurality of electrodes are coupled to corresponding sections of the laser cavity along the longitudinal light propagation direction, each corresponding section defining one of an amplification section or a modulation section. One or more DC sources are coupled to the electrodes associated with the amplification sections to forward-bias the p-n junction above transparency, so as to provide gain in the associated amplification sections. One or more modulation signal sources are coupled to the electrodes associated with the modulation sections, and apply a modulation signal across the p-n junction below transparency, the modulation signal providing a modulation of an output optical frequency of the semiconductor laser. Each modulation section is operated in photovoltaic mode.

公开(公告)号：US20240356305A1

公开(公告)日：2024-10-24

申请号：US18760508

申请日：2024-07-01

Applicant: TERAXION INC.

Inventor： Sylvain BOUDREAU ,  Keven BÉDARD ,  Michel MORIN ,  François COSTIN ,  André BABIN ,  Simon AYOTTE

IPC: H01S5/32 ,  H01S5/065 ,  H01S5/125

CPC classification number: H01S5/32 ,  H01S5/0655 ,  H01S5/125

Abstract: A semiconductor laser comprising a single mode laser cavity having a stack of semiconducting layers defining a transversal p-n junction is provided. A plurality of electrodes are coupled to corresponding sections of the laser cavity along the longitudinal light propagation direction, each corresponding section defining one of an amplification section or a modulation section. One or more DC sources are coupled to the electrodes associated with the amplification sections to forward-bias the p-n junction above transparency, so as to provide gain in the associated amplification sections. One or more modulation signal sources are coupled to the electrodes associated with the modulation sections, and apply a modulation signal across the p-n junction below transparency, the modulation signal providing a modulation of an output optical frequency of the semiconductor laser. Each modulation section is operated in photovoltaic mode.