SEMICONDUCTOR LASERS WITH IMPROVED FREQUENCY MODULATION RESPONSE

    公开(公告)号:US20220123526A1

    公开(公告)日:2022-04-21

    申请号:US17384135

    申请日:2021-07-23

    Applicant: TeraXion Inc.

    Abstract: A semiconductor laser comprising a single mode laser cavity having a stack of semiconducting layers defining a transversal p-n junction is provided. A plurality of electrodes are coupled to corresponding sections of the laser cavity along the longitudinal light propagation direction, each corresponding section defining one of an amplification section or a modulation section. One or more DC sources are coupled to the electrodes associated with the amplification sections to forward-bias the p-n junction above transparency, so as to provide gain in the associated amplification sections. One or more modulation signal sources are coupled to the electrodes associated with the modulation sections, and apply a modulation signal across the p-n junction below transparency, the modulation signal providing a modulation of an output optical frequency of the semiconductor laser. Each modulation section is operated in photovoltaic mode.

    VOLUME BRAGG GRATING IN A CYLINDRICAL BULK MEDIUM

    公开(公告)号:US20220283540A1

    公开(公告)日:2022-09-08

    申请号:US17689645

    申请日:2022-03-08

    Applicant: TERAXION INC.

    Abstract: A method of manufacturing a Volume Bragg Grating (VBG) is provided, comprising providing a cylindrical bulk medium made of a transparent glass material and having a central axis along a longitudinal direction, and inscribing an interference pattern in the cylindrical bulk medium. The interference pattern has a plurality of grating fringe elements distributed along a line parallel to the central axis. The method further includes rotating the cylindrical bulk medium about the central axis during said inscribing, thereby azimuthally extending the grating fringes elements. There is further provided a VBG manufactured according to such a method, the use of such a VBG in a CPA system of cladding-pumped fiber laser.

    SEMICONDUCTOR LASERS WITH IMPROVED FREQUENCY MODULATION RESPONSE

    公开(公告)号:US20240356305A1

    公开(公告)日:2024-10-24

    申请号:US18760508

    申请日:2024-07-01

    Applicant: TERAXION INC.

    CPC classification number: H01S5/32 H01S5/0655 H01S5/125

    Abstract: A semiconductor laser comprising a single mode laser cavity having a stack of semiconducting layers defining a transversal p-n junction is provided. A plurality of electrodes are coupled to corresponding sections of the laser cavity along the longitudinal light propagation direction, each corresponding section defining one of an amplification section or a modulation section. One or more DC sources are coupled to the electrodes associated with the amplification sections to forward-bias the p-n junction above transparency, so as to provide gain in the associated amplification sections. One or more modulation signal sources are coupled to the electrodes associated with the modulation sections, and apply a modulation signal across the p-n junction below transparency, the modulation signal providing a modulation of an output optical frequency of the semiconductor laser. Each modulation section is operated in photovoltaic mode.

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