公开(公告)号：US20220069118A1

公开(公告)日：2022-03-03

申请号：US17511134

申请日：2021-10-26

申请人： Tessera, Inc.

发明人： Huiming Bu ,  Kangguo Cheng ,  Dechao Guo ,  Sivananda K. Kanakasabapathy ,  Peng Xu

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/16 ,  H01L29/161 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/84 ,  H01L21/3065 ,  H01L21/324

摘要： A semiconductor device includes one or more fins. Each fin includes a top channel portion formed from a channel material, a middle portion, and a bottom substrate portion formed from a same material as an underlying substrate. An oxide layer is formed between the bottom substrate portion of each fin and the isolation layer, with a space between a sidewall of at least a top portion of the isolation dielectric layer and an adjacent sidewall of the one or more fins, above the oxide layer. A gate dielectric, protruding into the space and in contact with the middle portion, is formed over the one or more fins and has a portion formed from a material different from the oxide layer.

公开(公告)号：US11189729B2

公开(公告)日：2021-11-30

申请号：US16685229

申请日：2019-11-15

申请人： TESSERA, INC.

发明人： Huiming Bu ,  Kangguo Cheng ,  Dechao Guo ,  Sivananda K. Kanakasabapathy ,  Peng Xu

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L29/10 ,  H01L29/16 ,  H01L29/161 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/84 ,  H01L21/3065 ,  H01L21/324

摘要： A semiconductor device includes one or more fins. Each fin includes a top channel portion formed from a channel material, a middle portion, and a bottom substrate portion formed from a same material as an underlying substrate. An oxide layer is formed between the bottom substrate portion of each fin and the isolation layer, with a space between a sidewall of at least a top portion of the isolation dielectric layer and an adjacent sidewall of the one or more fins, above the oxide layer. A gate dielectric, protruding into the space and in contact with the middle portion, is formed over the one or more fins and has a portion formed from a material different from the oxide layer.

公开(公告)号：US11094824B2

公开(公告)日：2021-08-17

申请号：US16685329

申请日：2019-11-15

申请人： TESSERA, INC.

发明人： Huiming Bu ,  Kangguo Cheng ,  Dechao Guo ,  Sivananda K Kanakasabapathy ,  Peng Xu

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/16 ,  H01L29/161 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/84 ,  H01L21/3065 ,  H01L21/324

摘要： A semiconductor device includes one or more fins. Each fin includes a top channel portion formed from a channel material, and a bottom substrate portion formed from a same material as an underlying substrate. An isolation dielectric layer is formed between and around the bottom substrate portion of the one or more fins. A single oxide layer is formed in direct contact with the bottom substrate portion of each fin, between the bottom substrate portion of each fin and the isolation dielectric layer. A gate dielectric is formed over the one or more fins and between a straight sidewall of at least a top portion of the single oxide layer and an adjacent sidewall of the one or more fins, in contact with both the straight sidewall and the bottom substrate portion.

公开(公告)号：US10593802B2

公开(公告)日：2020-03-17

申请号：US15629280

申请日：2017-06-21

申请人： TESSERA, INC.

发明人： Huiming Bu ,  Kangguo Cheng ,  Dechao Guo ,  Sivananda K. Kanakasabapathy ,  Peng Xu

IPC分类号： H01L21/76 ,  H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/16 ,  H01L29/161 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/84 ,  H01L21/3065 ,  H01L21/324

摘要： Semiconductor devices include one or more fins. Each fin includes a top channel portion formed from a channel material and a bottom substrate portion formed from a same material as an underlying substrate, the top channel portion having a different width than the bottom substrate portion. An isolation dielectric layer formed between and around the bottom substrate portion of the one or more fins. A space exists between at least a top portion of the isolation dielectric layer and the one or more fins. A gate dielectric is formed over the one or more fins and in the space.