公开(公告)号：US10554203B1

公开(公告)日：2020-02-04

申请号：US16206317

申请日：2018-11-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Sualp Aras ,  Eung Jung Kim ,  Abidur Md Rahman

IPC: H03K17/16 ,  G01R31/00 ,  G01R19/165

Abstract: In some examples, the disclosure includes a circuit including a power field effect transistor (FET), a gate pull-down circuit, a pull-down bias circuit, and a radio frequency (RF) detector coupled to the source terminal of the power FET and the pull-down bias circuit. In an example, the RF detector circuit is configured to detect a presence of an alternating current signal at a source terminal of the power FET when the power FET is in a non-conductive state and control the pull-down bias circuit to bias the gate pull-down circuit to create a low impedance path between a gate terminal of the power FET and the source terminal of the power FET when the power FET is in the non-conductive state and the alternating current signal is present at the source terminal of the power FET.