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    Layout for reduced cross-talk in common terminal transistor
    1.
    发明授权
    Layout for reduced cross-talk in common terminal transistor 审中-公开

    公开(公告)号：US10670638B2

    公开(公告)日：2020-06-02

    申请号：US15947389

    申请日：2018-04-06

    Applicant: Texas Instruments Incorporated

    Inventor： Vijay Krishnamurthy ,  Abidur Rahman ,  Min Chu ,  Sualp Aras

    IPC: G01R19/10 ,  H01L29/78 ,  G01R19/00 ,  H03K17/16 ,  H01L29/735 ,  H01L27/088 ,  H01L29/06 ,  H01L21/8234

    Abstract: A microelectronic device has a common terminal transistor with two or more channels, and sense transistors in corresponding areas of the channels. The channels and the sense transistors share a common node in a semiconductor substrate. The sense transistors are configured to provide sense currents that are representative of currents through the corresponding channels. The sense transistors are located so that a ratio of the channel currents to the corresponding sense currents have less than a target value of cross-talk. The microelectronic device may be implemented without a compensation circuit which provides a compensation signal used to adjust one or more of the sense currents to reduce cross-talk. A method of forming the microelectronic device, including estimating a potential distribution in the semiconductor substrate containing the common node of the common terminal transistor, and selecting locations for the sense transistors based on the estimated potential distribution, is disclosed.

    Apparatus and system to suppress analog front end noise introduced by charge-pump through employment of charge-pump skipping
    3.
    发明授权
    Apparatus and system to suppress analog front end noise introduced by charge-pump through employment of charge-pump skipping 有权
    通过使用电荷泵跳跃来抑制由电荷泵引入的模拟前端噪声的装置和系统

    公开(公告)号：US08730075B2

    公开(公告)日：2014-05-20

    申请号：US13782902

    申请日：2013-03-01

    Applicant: Texas Instruments Incorporated

    Inventor： Sualp Aras ,  Guhaprakash Amudhan ,  Abidur Rahman ,  Xiaochun Zhao

    IPC: H03M1/00 ,  H03M1/12 ,  H04N5/335 ,  H04N3/14 ,  G11C27/02 ,  H02M3/07 ,  H03L7/18

    CPC classification number: H03M1/00 ,  G11C27/026 ,  H02M3/07 ,  H03L7/18 ,  H03M1/0818 ,  H03M1/12 ,  H04N3/155 ,  H04N5/335 ,  H04N5/3577

    Abstract: An apparatus, comprising: a charge-pump; a sampler that samples an optical signal, including: a black sampler; a video sampler; and an analog to digital converter. The first aspect further provides a single clock that is coupled to and provides clocking signals to: a) the charge-pump logic that is coupled to the charge-pump; and b) the sampler logic that is coupled to the sampler that samples the optical signal, wherein if the clock for the charge pump is running faster than an analog front end (“AFE”) video sampling clock, a state-machine control is configured to: skip the charge pump clock period right before a video sample signal falling edge, thereby recovering to a normal operation the next charge-pump clock period, wherein this duty cycle modulation of charge pump clock will not substantially impact charge pump output.

    Abstract translation: 一种装置，包括：电荷泵; 采样器采样光信号，包括：黑色采样器; 视频采样器; 和模数转换器。 第一方面还提供了一个单个时钟，其耦合到并提供时钟信号以便：a）耦合到电荷泵的电荷泵逻辑; 以及b）耦合到采样器的采样器逻辑，其对光信号进行采样，其中如果电荷泵的时钟运行比模拟前端（“AFE”）视频采样时钟快，则配置状态机控制 到：在视频采样信号下降沿之前跳过电荷泵时钟周期，从而恢复下一个电荷泵时钟周期的正常操作，其中电荷泵时钟的这种占空比调制将不会基本上影响电荷泵输出。

    LAYOUT FOR REDUCED CROSS-TALK IN COMMON TERMINAL TRANSISTOR
    4.
    发明申请
    LAYOUT FOR REDUCED CROSS-TALK IN COMMON TERMINAL TRANSISTOR 审中-公开

    公开(公告)号：US20200174045A1

    公开(公告)日：2020-06-04

    申请号：US16783436

    申请日：2020-02-06

    Applicant: Texas Instruments Incorporated

    Inventor： Vijay Krishnamurthy ,  Abidur Rahman ,  Min Chu ,  Sualp Aras

    IPC: G01R19/10 ,  H01L29/78 ,  G01R19/00 ,  H03K17/16 ,  H01L29/735 ,  H01L27/088 ,  H01L29/06 ,  H01L21/8234

    Abstract: A microelectronic device has a common terminal transistor with two or more channels, and sense transistors in corresponding areas of the channels. The channels and the sense transistors share a common node in a semiconductor substrate. The sense transistors are configured to provide sense currents that are representative of currents through the corresponding channels. The sense transistors are located so that a ratio of the channel currents to the corresponding sense currents have less than a target value of cross-talk. The microelectronic device may be implemented without a compensation circuit which provides a compensation signal used to adjust one or more of the sense currents to reduce cross-talk. A method of forming the microelectronic device, including estimating a potential distribution in the semiconductor substrate containing the common node of the common terminal transistor, and selecting locations for the sense transistors based on the estimated potential distribution, is disclosed.

    High Current Limit Trim Apparatus and Methodology
    6.
    发明申请
    High Current Limit Trim Apparatus and Methodology 审中-公开
    高电流限制装置和方法

    公开(公告)号：US20170038784A1

    公开(公告)日：2017-02-09

    申请号：US15231472

    申请日：2016-08-08

    Applicant: TEXAS INSTRUMENTS INCORPORATED

    Inventor： Md. Abidur Rahman ,  Sualp Aras ,  Tri Cao Nguyen

    IPC: G05F1/571 ,  G01R31/28

    CPC classification number: G05F1/571 ,  G01R31/2827 ,  G05F1/569 ,  G05F1/573 ,  H02H3/006 ,  H02H3/08 ,  H02H3/087 ,  H02H3/20 ,  H02H9/02

    Abstract: A circuit protective system. The system has: (i) an input for sensing an operational voltage responsive to a current flowing through a transistor; (ii) circuitry for applying a forced voltage at the input; (iii) voltage-to-current conversion circuitry for outputting a reference current in response to the forced voltage at the input; (iv) circuitry for providing a reference trim current in response to a trim indicator; and (v) comparison circuitry for outputting a limit signal in response to a comparison of the reference current and the reference trim current.

    Abstract translation: 电路保护系统。 该系统具有：（i）用于感测响应于流过晶体管的电流的工作电压的输入; （ii）在输入端施加强制电压的电路; （iii）电压 - 电流转换电路，用于响应于输入处的强制电压输出参考电流; （iv）响应于修剪指示器提供参考修剪电流的电路; 和（v）用于响应于参考电流和参考调整电流的比较来输出限制信号的比较电路。

    Level shifter with automatic direction sensing
    7.
    发明授权
    Level shifter with automatic direction sensing 有权

    公开(公告)号：US11973499B1

    公开(公告)日：2024-04-30

    申请号：US18059764

    申请日：2022-11-29

    Applicant: TEXAS INSTRUMENTS INCORPORATED

    Inventor： Deric Wayne Waters ,  Roland Son ,  Sualp Aras ,  Ralph Braxton Wade, III

    IPC: H03K19/0185 ,  G01R19/10

    CPC classification number: H03K19/018592 ,  G01R19/10 ,  H03K19/018507

    Abstract: A bidirectional level shifter circuit includes first and second driver circuits, first and second comparators, and a control circuit. The first driver circuit includes a first driver output and a first enable input. The second driver circuit includes a second driver output and a second enable input. The first comparator includes a first comparator output, a first reference input, and a first comparator input that is coupled to the second driver output. The second comparator includes a second comparator output, a second reference input, and a second comparator input is coupled to the first driver output. The control circuit includes a first control input coupled to the first comparator output, a second control input coupled to the second comparator output, a first control output coupled to the first enable input, and a second control output coupled to the second enable input.

    LAYOUT FOR REDUCED CROSS-TALK IN COMMON TERMINAL TRANSISTOR
    9.
    发明申请
    LAYOUT FOR REDUCED CROSS-TALK IN COMMON TERMINAL TRANSISTOR 审中-公开

    公开(公告)号：US20190137546A1

    公开(公告)日：2019-05-09

    申请号：US15947389

    申请日：2018-04-06

    Applicant: Texas Instruments Incorporated

    Inventor： Vijay Krishnamurthy ,  Abidur Rahman ,  Min Chu ,  Sualp Aras

    IPC: G01R19/10 ,  H03K17/16 ,  G01R19/00 ,  H01L29/78

    Abstract: A microelectronic device has a common terminal transistor with two or more channels, and sense transistors in corresponding areas of the channels. The channels and the sense transistors share a common node in a semiconductor substrate. The sense transistors are configured to provide sense currents that are representative of currents through the corresponding channels. The sense transistors are located so that a ratio of the channel currents to the corresponding sense currents have less than a target value of cross-talk. The microelectronic device may be implemented without a compensation circuit which provides a compensation signal used to adjust one or more of the sense currents to reduce cross-talk. A method of forming the microelectronic device, including estimating a potential distribution in the semiconductor substrate containing the common node of the common terminal transistor, and selecting locations for the sense transistors based on the estimated potential distribution, is disclosed.

    Safe Operating Area Energy Limit System and Method In Power Application
    10.
    发明申请
    Safe Operating Area Energy Limit System and Method In Power Application 审中-公开
    电力应用中的安全操作区能量限制系统和方法

    公开(公告)号：US20170033552A1

    公开(公告)日：2017-02-02

    申请号：US15225462

    申请日：2016-08-01

    Applicant: TEXAS INSTRUMENTS INCORPORATED

    Inventor： Sualp Aras ,  Adam Quirk ,  Md. Abidur Rahman

    IPC: H02H3/38 ,  H02H3/00

    CPC classification number: H02H3/38 ,  H02H3/006 ,  H02H3/027 ,  H02H3/06 ,  H02H3/42

    Abstract: A circuit protective system with an input for sensing a reference current and an input for sensing a reference voltage. The system also has circuitry for determining an estimated energy in response to the reference current and the reference voltage and circuitry for generating a control signal responsive to the estimated energy exceeding a threshold.

    Abstract translation: 具有用于感测参考电流的输入和用于感测参考电压的输入的电路保护系统。 该系统还具有用于响应于参考电流和参考电压确定估计能量的电路和用于响应于所估计的能量超过阈值产生控制信号的电路。

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