公开(公告)号：US20200303518A1

公开(公告)日：2020-09-24

申请号：US16897382

申请日：2020-06-10

Applicant: Texas Instruments Incorporated

Inventor： Henry Litzmann EDWARDS ,  Andrew D. STRACHAN

IPC: H01L29/66 ,  H01L21/266 ,  H01L29/78 ,  H01L29/06 ,  H01L21/762 ,  H01L29/40

Abstract: A method to fabricate a transistor includes implanting dopants into a semiconductor to form a drift layer having majority carriers of a first type; etching a trench into the semiconductor; thermally growing an oxide liner into and on the trench and the drift layer; depositing an oxide onto the oxide liner on the trench to form a shallow trench isolation region; implanting dopants into the semiconductor to form a drain region in contact with the drift layer and having majority carriers of the first type; implanting dopants into the semiconductor to form a body region having majority carriers of a second type; forming a gate oxide over a portion of the drift layer and the body region; forming a gate over the gate oxide; and implanting dopants into the body region to form a source region having majority carriers of the first type.

公开(公告)号：US20190148517A1

公开(公告)日：2019-05-16

申请号：US15813934

申请日：2017-11-15

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Henry Litzmann EDWARDS ,  Andrew D. STRACHAN

IPC: H01L29/66 ,  H01L21/266 ,  H01L21/762 ,  H01L29/06 ,  H01L29/78

Abstract: A method to fabricate a transistor includes implanting dopants into a semiconductor to form a drift layer having majority carriers of a first type; etching a trench into the semiconductor; thermally growing an oxide liner into and on the trench and the drift layer; depositing an oxide onto the oxide liner on the trench to form a shallow trench isolation region; implanting dopants into the semiconductor to form a drain region in contact with the drift layer and having majority carriers of the first type; implanting dopants into the semiconductor to form a body region having majority carriers of a second type; forming a gate oxide over a portion of the drift layer and the body region; forming a gate over the gate oxide; and implanting dopants into the body region to form a source region having majority carriers of the first type.