公开(公告)号：US11495301B2

公开(公告)日：2022-11-08

申请号：US17219092

申请日：2021-03-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Xiaowei Deng ,  Yunchen Qiu ,  David Joseph Toops

IPC: G11C7/00 ,  G11C16/26

Abstract: In one example a semiconductor device has a data latch that includes first and second transmission gates and first and second inverters. The first inverter is connected between a first terminal of the first transmission gate and a first terminal of the second transmission gate. The second inverter is connected between a second terminal of the first transmission gate and a second terminal of the second transmission gate. The data latch is configured to store a datum received at the connection between the first transmission gate and the second inverter, and to store a datum received at the connection between the second transmission gate and the first inverter.

公开(公告)号：US20210304824A1

公开(公告)日：2021-09-30

申请号：US17219092

申请日：2021-03-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Xiaowei Deng ,  Yunchen Qiu ,  David Joseph Toops

IPC: G11C16/26

Abstract: In one example a semiconductor device has a data latch that includes first and second transmission gates and first and second inverters. The first inverter is connected between a first terminal of the first transmission gate and a first terminal of the second transmission gate. The second inverter is connected between a second terminal of the first transmission gate and a second terminal of the second transmission gate. The data latch is configured to store a datum received at the connection between the first transmission gate and the second inverter, and to store a datum received at the connection between the second transmission gate and the first inverter.