公开(公告)号：US10593773B2

公开(公告)日：2020-03-17

申请号：US15720616

申请日：2017-09-29

Applicant: Texas Instruments Incorporated

Inventor： Umamaheswari Aghoram ,  Pushpa Mahalingam ,  Alexei Sadovnikov ,  Eugene C Davis

IPC: H01L29/423 ,  H01L21/02 ,  H01L29/221 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L21/762 ,  H01L29/40 ,  H01L21/761 ,  H01L29/10

Abstract: A laterally diffused metal oxide silicon (LDMOS) transistor and a method of making the LDMOS transistor are disclosed. The LDMOS transistor includes a drain drift region formed in a substrate and containing a drain contact region. A gate structure overlies a channel region in the substrate and a first shallow-trench isolation (STI) structure is formed between the drain contact region and the channel region. The first STI structure contains a high-k dielectric and a second STI structure contains silicon dioxide.

公开(公告)号：US11081558B2

公开(公告)日：2021-08-03

申请号：US16812311

申请日：2020-03-08

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Umamaheswari Aghoram ,  Pushpa Mahalingam ,  Alexei Sadovnikov ,  Eugene C Davis

IPC: H01L29/423 ,  H01L21/02 ,  H01L21/762 ,  H01L29/06 ,  H01L29/221 ,  H01L29/40 ,  H01L29/66 ,  H01L29/78 ,  H01L21/761 ,  H01L29/10

Abstract: A laterally diffused metal oxide silicon (LDMOS) transistor and a method of making the LDMOS transistor are disclosed. The LDMOS transistor includes a drain drift region formed in a substrate and containing a drain contact region. A gate structure overlies a channel region in the substrate and a first shallow-trench isolation (STI) structure located between the drain contact region and the channel region. The first STI structure contains a high-k dielectric and a second STI structure contains silicon oxide.

公开(公告)号：US20200212188A1

公开(公告)日：2020-07-02

申请号：US16812311

申请日：2020-03-08

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Umamaheswari Aghoram ,  Pushpa Mahalingam ,  Alexei Sadovnikov ,  Eugene C Davis

IPC: H01L29/423 ,  H01L21/02 ,  H01L29/221 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L21/762 ,  H01L29/40

Abstract: A laterally diffused metal oxide silicon (LDMOS) transistor and a method of making the LDMOS transistor are disclosed. The LDMOS transistor includes a drain drift region formed in a substrate and containing a drain contact region. A gate structure overlies a channel region in the substrate and a first shallow-trench isolation (STI) structure located between the drain contact region and the channel region. The first STI structure contains a high-k dielectric and a second STI structure contains silicon oxide.