DIRECT COPPER WIRE BONDING ON NANOTWIN COPPER STRUCTURES

    公开(公告)号:US20250140735A1

    公开(公告)日:2025-05-01

    申请号:US18498126

    申请日:2023-10-31

    Abstract: A package comprises a semiconductor die including a device side having circuitry formed therein. The package includes a metal member coupled to the device side and a nanotwin copper member having a bottom surface coupled to the metal member, the nanotwin copper member comprising a twin boundary separating a first region having a first grain structure from a second region having a second grain structure. The package also comprises a wire bond coupled directly to a top surface of the nanotwin copper member, the wire bond contacting multiple regions of the nanotwin copper member. The package also comprises a mold compound covering the die, the metal member, the nanotwin copper member, and the wire bond.

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