公开(公告)号：US20230352522A1

公开(公告)日：2023-11-02

申请号：US17732513

申请日：2022-04-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Mattias Dahlstrom ,  Joseph De Santis ,  Jeffrey A. Babcock

IPC: H01L29/06 ,  H01L29/15 ,  H01L27/06

CPC classification number: H01L29/0649 ,  H01L29/15 ,  H01L27/067

Abstract: Semiconductor devices for high frequency operations are described. The semiconductor devices include a substrate with an epitaxial layer. The epitaxial layer has higher resistivity than the substrate and includes a surface facing away from the substrate. The epitaxial layer includes a shallow trench isolation (STI) structure extended to a first depth from the surface, which is surrounded by a well structure. Underneath the STI structure, the epitaxial layer includes a lightly doped portion exclusive of dopant atoms of the well structure. Moreover, the STI structure includes an inner portion surrounded by a deep trench isolation structure extended to a second depth from the surface, the second depth being greater than the first depth. An integrated circuit component is located above the inner portion of the STI structure.