公开(公告)号：US20230088544A1

公开(公告)日：2023-03-23

申请号：US17538135

申请日：2021-11-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Tatsuya Tominari ,  Jerald Rock ,  Hiroshi Yasuda ,  Wibo Van Noort ,  Mattias Dahlstrom

IPC: H01L29/737 ,  H01L29/66

Abstract: The present disclosure generally relates to dopant profile control in a heterojunction bipolar transistor (HBT). In an example, a semiconductor device structure includes a semiconductor substrate and an HBT. The HBT includes a collector region, a base region, and an emitter region. The base region is disposed on or over the collector region. The emitter region is disposed on or over the base region. The base region is disposed on or over the semiconductor substrate and includes a heteroepitaxial sub-layer. The heteroepitaxial sub-layer is doped with a dopant. A concentration gradient of the dopant increases from a region in a layer adjoining and overlying the heteroepitaxial sub-layer to a peak concentration in the heteroepitaxial sub-layer without decreasing between the region and the peak concentration.

公开(公告)号：US20230352522A1

公开(公告)日：2023-11-02

申请号：US17732513

申请日：2022-04-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Mattias Dahlstrom ,  Joseph De Santis ,  Jeffrey A. Babcock

IPC: H01L29/06 ,  H01L29/15 ,  H01L27/06

CPC classification number: H01L29/0649 ,  H01L29/15 ,  H01L27/067

Abstract: Semiconductor devices for high frequency operations are described. The semiconductor devices include a substrate with an epitaxial layer. The epitaxial layer has higher resistivity than the substrate and includes a surface facing away from the substrate. The epitaxial layer includes a shallow trench isolation (STI) structure extended to a first depth from the surface, which is surrounded by a well structure. Underneath the STI structure, the epitaxial layer includes a lightly doped portion exclusive of dopant atoms of the well structure. Moreover, the STI structure includes an inner portion surrounded by a deep trench isolation structure extended to a second depth from the surface, the second depth being greater than the first depth. An integrated circuit component is located above the inner portion of the STI structure.

公开(公告)号：US20240405106A1

公开(公告)日：2024-12-05

申请号：US18804222

申请日：2024-08-14

Applicant: Texas Instruments Incorporated

Inventor： Tatsuya Tominari ,  Jerald Rock ,  Hiroshi Yasuda ,  Wibo Van Noort ,  Mattias Dahlstrom

IPC: H01L29/737 ,  H01L29/66

Abstract: The present disclosure generally relates to dopant profile control in a heterojunction bipolar transistor (HBT). In an example, a semiconductor device structure includes a semiconductor substrate and an HBT. The HBT includes a collector region, a base region, and an emitter region. The base region is disposed on or over the collector region. The emitter region is disposed on or over the base region. The base region is disposed on or over the semiconductor substrate and includes a heteroepitaxial sub-layer. The heteroepitaxial sub-layer is doped with a dopant. A concentration gradient of the dopant increases from a region in a layer adjoining and overlying the heteroepitaxial sub-layer to a peak concentration in the heteroepitaxial sub-layer without decreasing between the region and the peak concentration.

公开(公告)号：US12068402B2

公开(公告)日：2024-08-20

申请号：US17538135

申请日：2021-11-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Tatsuya Tominari ,  Jerald Rock ,  Hiroshi Yasuda ,  Wibo Van Noort ,  Mattias Dahlstrom

IPC: H01L29/737 ,  H01L29/66

CPC classification number: H01L29/737 ,  H01L29/66242

Abstract: The present disclosure generally relates to dopant profile control in a heterojunction bipolar transistor (HBT). In an example, a semiconductor device structure includes a semiconductor substrate and an HBT. The HBT includes a collector region, a base region, and an emitter region. The base region is disposed on or over the collector region. The emitter region is disposed on or over the base region. The base region is disposed on or over the semiconductor substrate and includes a heteroepitaxial sub-layer. The heteroepitaxial sub-layer is doped with a dopant. A concentration gradient of the dopant increases from a region in a layer adjoining and overlying the heteroepitaxial sub-layer to a peak concentration in the heteroepitaxial sub-layer without decreasing between the region and the peak concentration.