公开(公告)号：US20240405125A1

公开(公告)日：2024-12-05

申请号：US18326628

申请日：2023-05-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Jack G. Qian ,  Doug Weiser ,  Kemal T. San

IPC: H01L29/78 ,  H01L21/265 ,  H01L29/66

Abstract: The present disclosure generally relates to a buried channel semiconductor device that includes one or more energy barrier modulation regions. In an example, a device includes a source/drain region, an energy barrier modulation region, a channel covering surface region, and a gate structure. The source/drain region is in a doped region in a semiconductor substrate that has an upper surface. The energy barrier modulation and channel covering surface regions are in the doped region and at the upper surface. The gate structure is over the upper surface. The energy barrier modulation and channel covering surface regions underlie the gate structure. The energy barrier modulation region is laterally between the source/drain and channel covering surface regions. The doped and energy barrier modulation regions are doped with a first conductivity type, and the source/drain and channel covering surface regions are doped with a second conductivity type opposite from the first conductivity type.