LASER ABLATION SURFACE TREATMENT FOR MICROELECTRONIC ASSEMBLY

    公开(公告)号:US20200273720A1

    公开(公告)日:2020-08-27

    申请号:US16802819

    申请日:2020-02-27

    Inventor: Leon Stiborek

    Abstract: A method includes removing an oxide layer from select areas of a surface of a metal structure of a lead frame to create openings that extend through the oxide layer to expose portions of the surface of the metal structure. The method further includes attaching a semiconductor die to the lead frame, performing an electrical connection process that electrically couples an exposed portion of the surface of the metal structure to a conductive feature of the semiconductor die, enclosing the semiconductor die in a package structure, and separating the electronic device from the lead frame. In one example, the openings are created by a laser ablation process. In another example, the openings are created by a chemical etch process using a mask. In another example, the openings are created by a plasma process.

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