公开(公告)号：US11865773B2

公开(公告)日：2024-01-09

申请号：US16680153

申请日：2019-11-11

Applicant: Texas Instruments Incorporated

Inventor： Daniel Lee Revier ,  Sean Ping Chang ,  Benjamin Stassen Cook

IPC: B29C64/165 ,  B33Y80/00 ,  B33Y10/00 ,  B33Y70/00 ,  B33Y30/00 ,  B28B1/00 ,  H01L21/02 ,  H01L21/288 ,  H01L21/67 ,  B22F10/00 ,  B22F10/14 ,  B22F12/37 ,  B22F12/53 ,  B22F12/55 ,  B22F12/57 ,  B22F12/41 ,  B29L31/34 ,  B22F12/00 ,  B22F12/49

CPC classification number: B29C64/165 ,  B22F10/00 ,  B22F10/14 ,  B22F12/37 ,  B22F12/53 ,  B22F12/55 ,  B22F12/57 ,  B28B1/001 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y70/00 ,  B33Y80/00 ,  H01L21/0217 ,  H01L21/02164 ,  H01L21/02288 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02623 ,  H01L21/288 ,  H01L21/6715 ,  B22F12/226 ,  B22F12/41 ,  B22F12/49 ,  B29L2031/34 ,  B22F2999/00 ,  B22F10/30 ,  B22F12/55 ,  B22F12/57

Abstract: A layer of additive material is formed in a circular printing area on a substrate using additive sources distributed across a printing zone. The additive sources form predetermined discrete amounts of the additive material. The substrate and the additive sources are rotated with respect to each other around a center of rotation, so that a pattern of the additive material is formed in a circular printing area on the substrate. Each additive source receives actuation waveforms at an actuation frequency that is proportional to a distance of the additive source from the center of rotation. The actuation waveforms include formation signals, with a maximum of one formation signal in each cycle of the actuation frequency. The formation signals result in the additive sources forming the predetermined discrete amounts of the additive material on the substrate.

公开(公告)号：US11676930B2

公开(公告)日：2023-06-13

申请号：US17315102

申请日：2021-05-07

Applicant: Texas Instruments Incorporated

Inventor： Benjamin Stassen Cook ,  Daniel Lee Revier ,  Sadia Naseem ,  Mahmud Halim Chowdhury

IPC: H01L23/48 ,  H01L23/00

CPC classification number: H01L24/32 ,  H01L24/83 ,  H01L2224/32058 ,  H01L2924/35121

Abstract: In described examples, a microelectronic device includes a microelectronic die with a die attach surface. The microelectronic device further includes a nanoparticle layer coupled to the die attach surface. The nanoparticle layer may be in direct contact with the die attach surface, or may be coupled to the die attach surface through an intermediate layer, such as an adhesion layer or a contact metal layer. The nanoparticle layer includes nanoparticles having adjacent nanoparticles adhered to each other. The microelectronic die is attached to a package substrate by a die attach material. The die attach material extends into the nanoparticle layer and contacts at least a portion of the nanoparticles.

公开(公告)号：US11417540B2

公开(公告)日：2022-08-16

申请号：US17114240

申请日：2020-12-07

Applicant: Texas Instruments Incorporated

Inventor： Benjamin Stassen Cook ,  Daniel Lee Revier

IPC: H01L21/56 ,  H01L23/31 ,  H01L23/66 ,  H01L23/495 ,  H01L23/00

Abstract: In described examples, a method for encapsulating a semiconductor device includes the steps of immersing a layer of the semiconductor device in a liquid encapsulation material, irradiating portions of the liquid encapsulation material to polymerize the liquid encapsulation material, and moving the semiconductor device further from a surface of the liquid encapsulation material proximate to the layer. Immersing the semiconductor device is performed to cover a layer of the device in the liquid encapsulation material. Targeted locations of the liquid encapsulation material covering the layer are irradiated to form solid encapsulation material. The semiconductor device is moved from a surface of the liquid encapsulation material so that a new layer of the semiconductor device and/or of the solid encapsulation material can be covered by the liquid encapsulation material. The irradiating and moving steps are then repeated until a three dimensional structure on the semiconductor device is formed using the solid encapsulation material.

公开(公告)号：US11271296B2

公开(公告)日：2022-03-08

申请号：US16181627

申请日：2018-11-06

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Leon Stiborek ,  Alexey Berd ,  Daniel Lee Revier

IPC: H01Q1/38 ,  H01Q13/16 ,  H01Q1/40 ,  H01Q1/24 ,  H01Q9/04

Abstract: An antenna includes a metal member having a surface that includes a slot. The metal member includes a plurality of legs orthogonal to the surface of the metal member. The plurality of legs are configured to be attached to a circuit board. A first dielectric material is in the slot.

公开(公告)号：US20210265299A1

公开(公告)日：2021-08-26

申请号：US17315102

申请日：2021-05-07

Applicant: Texas Instruments Incorporated

Inventor： Benjamin Stassen Cook ,  Daniel Lee Revier ,  Sadia Naseem ,  Mahmud Halim Chowdhury

IPC: H01L23/00

Abstract: In described examples, a microelectronic device includes a microelectronic die with a die attach surface. The microelectronic device further includes a nanoparticle layer coupled to the die attach surface. The nanoparticle layer may be in direct contact with the die attach surface, or may be coupled to the die attach surface through an intermediate layer, such as an adhesion layer or a contact metal layer. The nanoparticle layer includes nanoparticles having adjacent nanoparticles adhered to each other. The microelectronic die is attached to a package substrate by a die attach material. The die attach material extends into the nanoparticle layer and contacts at least a portion of the nanoparticles.

公开(公告)号：US10886187B2

公开(公告)日：2021-01-05

申请号：US15792580

申请日：2017-10-24

Applicant: Texas Instruments Incorporated

Inventor： Benjamin Stassen Cook ,  Daniel Lee Revier

IPC: H01L23/31 ,  H01L23/29 ,  H03H9/02 ,  H01L23/495 ,  H01L23/00 ,  H01L23/34 ,  G10K11/162 ,  G10K11/168

Abstract: An encapsulated integrated circuit is provided that includes an integrated circuit (IC) die. An encapsulation material encapsulates the IC die. A phononic bandgap structure is included within the encapsulation material that is configured to have a phononic bandgap with a frequency range approximately equal to a range of frequencies of thermal phonons produced by the IC die when the IC die is operating.

公开(公告)号：US10833648B2

公开(公告)日：2020-11-10

申请号：US15792591

申请日：2017-10-24

Applicant: Texas Instruments Incorporated

Inventor： Daniel Lee Revier ,  Benjamin Stassen Cook

IPC: H03H9/02 ,  H01L23/28 ,  B06B1/06 ,  H03H3/007 ,  H01L23/00 ,  H03H9/10 ,  H04R17/00 ,  G01H11/08 ,  G10K15/04 ,  H01L23/29 ,  H01L23/31 ,  G01N29/34

Abstract: An encapsulated integrated circuit is provided that includes an integrated circuit (IC) die. A phonon device is fabricated on the IC die that is configured to emit or to receive phonons that have a range of ultrasonic frequencies. An encapsulation material encapsulates the IC die. A phononic bandgap structure is included within the encapsulation material that is configured to have a phononic bandgap with a frequency range that includes at least a portion of the range of ultrasonic frequencies. A phononic channel is located in the phononic bandgap structure between the phonon device and a surface of the encapsulated IC.

公开(公告)号：US10788367B2

公开(公告)日：2020-09-29

申请号：US16715531

申请日：2019-12-16

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Benjamin Stassen Cook ,  Daniel Lee Revier

IPC: H01L21/00 ,  G01J3/02 ,  G02B6/122 ,  G01N21/3581 ,  G01J3/12

Abstract: On an integrated circuit (IC) die, sensors are configured to receive electromagnetic energy and to generate signals in response to the electromagnetic energy. An encapsulation material encapsulates the IC die and the sensors. A filter structure includes a diffusion of particles within the encapsulation material. The filter structure includes: a first region configured to pass a first band of the electromagnetic energy to the sensors or to block the first band of the electromagnetic energy from passing to the sensors; and a second region configured to pass a second band of the electromagnetic energy to the sensors or to block the second band of the electromagnetic energy from passing to the sensors. The encapsulation material has a first intrinsic property, and the particles have a second intrinsic property that is different from the first intrinsic property.

公开(公告)号：US10780467B2

公开(公告)日：2020-09-22

申请号：US15492433

申请日：2017-04-20

Applicant: Texas Instruments Incorporated

Inventor： Daniel Lee Revier ,  Benjamin Stassen Cook ,  David Patrick Magee ,  Stephen John Fedigan

IPC: B08B7/02 ,  G02B27/00

Abstract: Methods and apparatus for surface wetting control are disclosed. In certain described examples, an apparatus can expel fluid from a droplet on a surface using a transducer mechanically coupled to the surface. A first area of the surface can have a first wettability for the fluid, and a second area of the surface can have a second wettability for the fluid. The first wettability of the first area of the surface can be greater than the second wettability of the second area of the surface. The first area and the second area can be arranged in a patterned arrangement.

公开(公告)号：US12046430B2

公开(公告)日：2024-07-23

申请号：US18213296

申请日：2023-06-23

Applicant: Texas Instruments Incorporated

Inventor： Adam Joseph Fruehling ,  Dishit Paresh Parekh ,  Daniel Lee Revier ,  Benjamin Stassen Cook

IPC: H01H29/28 ,  H01H1/00 ,  H01H11/00 ,  H01H29/00

CPC classification number: H01H29/28 ,  H01H1/0036 ,  H01H11/00 ,  H01H2029/008

Abstract: A switch that includes a droplet capable of spreading between two conductors to allow them to be coupled when a voltage is applied. The droplet can be enclosed by a cap that is bonded to a wafer that the droplet is placed upon, and include metallic properties. The cap can create a cavity that may be filled by a fluid, gas, or vapor. The cavity can have multiple conductors that extend partially or fully through it. The droplet can couple the conductors when specific voltages, or frequencies are applied to them. At the specific voltage and frequency, the droplet can spread, allowing at least two conductors to be coupled.