PLATED METAL LAYER IN POWER PACKAGES

    公开(公告)号:US20220181241A1

    公开(公告)日:2022-06-09

    申请号:US17334491

    申请日:2021-05-28

    Abstract: In some examples, a semiconductor package comprises a multi-layer package substrate. The multi-layer package substrate includes first and second metal layers, the first metal layer positioned above the second metal layer and coupled to the second metal layer by way of a via. The substrate also includes a dielectric covering at least part of the first and second metal layers and the via. The package includes a plated metal layer plated on at least part of the first metal layer and positioned above the dielectric, a combination of the first metal layer and the plated metal layer being thicker than the second metal layer. The package includes a semiconductor die having a device side, the device side vertically aligned with and coupled to the plated metal layer.

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