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公开(公告)号:US20200381342A1
公开(公告)日:2020-12-03
申请号:US16886130
申请日:2020-05-28
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: YongSeok PARK , Makarand Ramkrishna KULKARNI , Ricky Alan JACKSON , Byron Lovell WILLIAMS , Thomas Dyer BONIFIELD
IPC: H01L23/495 , H01L23/528 , H01L23/31 , H01L43/06 , G01R15/20 , H01L21/56 , H01L21/48 , H01L23/00
Abstract: In examples, a semiconductor package comprises a first conductive terminal; a second conductive terminal; a conductive pathway coupling the first and second conductive terminals, the conductive pathway configured to generate a magnetic field; a semiconductor die including a circuit configured to detect the magnetic field; and first and second polyimide layers positioned between the conductive pathway and the semiconductor die.
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公开(公告)号:US20240047330A1
公开(公告)日:2024-02-08
申请号:US18484310
申请日:2023-10-10
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Jonathan Almeria NOQUIL , Makarand Ramkrishna KULKARNI , Osvaldo Jorge LOPEZ , Yiqi TANG , Rajen Manicon MURUGAN , Liang WAN
IPC: H01L23/498
CPC classification number: H01L23/49822 , H01L23/49844 , H01L2224/13147 , H01L2224/16238 , H01L24/13
Abstract: In some examples, a semiconductor package comprises a multi-layer package substrate. The multi-layer package substrate includes first and second metal layers, the first metal layer positioned above the second metal layer and coupled to the second metal layer by way of a via. The substrate also includes a dielectric covering at least part of the first and second metal layers and the via. The package includes a plated metal layer plated on at least part of the first metal layer and positioned above the dielectric, a combination of the first metal layer and the plated metal layer being thicker than the second metal layer. The package includes a semiconductor die having a device side, the device side vertically aligned with and coupled to the plated metal layer.
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公开(公告)号:US20220181241A1
公开(公告)日:2022-06-09
申请号:US17334491
申请日:2021-05-28
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Jonathan Almeria NOQUIL , Makarand Ramkrishna KULKARNI , Osvaldo Jorge LOPEZ , Yiqi TANG , Rajen Manicon MURUGAN , Liang WAN
IPC: H01L23/498
Abstract: In some examples, a semiconductor package comprises a multi-layer package substrate. The multi-layer package substrate includes first and second metal layers, the first metal layer positioned above the second metal layer and coupled to the second metal layer by way of a via. The substrate also includes a dielectric covering at least part of the first and second metal layers and the via. The package includes a plated metal layer plated on at least part of the first metal layer and positioned above the dielectric, a combination of the first metal layer and the plated metal layer being thicker than the second metal layer. The package includes a semiconductor die having a device side, the device side vertically aligned with and coupled to the plated metal layer.
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