公开(公告)号：US20200381342A1

公开(公告)日：2020-12-03

申请号：US16886130

申请日：2020-05-28

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： YongSeok PARK ,  Makarand Ramkrishna KULKARNI ,  Ricky Alan JACKSON ,  Byron Lovell WILLIAMS ,  Thomas Dyer BONIFIELD

IPC: H01L23/495 ,  H01L23/528 ,  H01L23/31 ,  H01L43/06 ,  G01R15/20 ,  H01L21/56 ,  H01L21/48 ,  H01L23/00

Abstract: In examples, a semiconductor package comprises a first conductive terminal; a second conductive terminal; a conductive pathway coupling the first and second conductive terminals, the conductive pathway configured to generate a magnetic field; a semiconductor die including a circuit configured to detect the magnetic field; and first and second polyimide layers positioned between the conductive pathway and the semiconductor die.

公开(公告)号：US20240391758A1

公开(公告)日：2024-11-28

申请号：US18794909

申请日：2024-08-05

Applicant: Texas Instruments Incorporated

Inventor： Ting-Ta YEN ,  Jeronimo SEGOVIA-FERNANDEZ ,  Ricky Alan JACKSON ,  Benjamin COOK

IPC: B81B7/00

Abstract: In one example, a method comprises etching a vertical spring in a substrate, the vertical spring encompassing a device formed on a front side of the substrate. The method further comprises bonding a cap to the front side of the substrate, the cap disposed over the device and the vertical spring.

公开(公告)号：US20170345774A1

公开(公告)日：2017-11-30

申请号：US15657438

申请日：2017-07-24

Applicant: Texas Instruments Incorporated

Inventor： Ricky Alan JACKSON ,  Sudtida LAVANGKUL ,  Erika Lynn MAZOTTI

IPC: H01L23/00 ,  H01L23/31 ,  H01L21/78 ,  H01L23/528 ,  H01L23/532 ,  H01L23/544

CPC classification number: H01L23/562 ,  H01L23/3171 ,  H01L23/528 ,  H01L23/53261 ,  H01L23/53266 ,  H01L23/585

Abstract: Disclosed embodiments include an integrated circuit having a semiconductor substrate with insulator layers and conductor layers overlying the semiconductor substrate. A scribe region overlying the semiconductor substrate and a periphery of the integrated circuit includes a crack arrest structure and a scribe seal. The crack arrest structure provides first vertical conductor structure that surrounds the periphery of the integrated circuit. The scribe seal is spaced from and surrounded by the crack arrest structure and provides a second vertical conductor structure. The scribe seal includes first and second vias spaced from each other and connected to one of the conductor layers. The first via is a trench via and the second via is a stitch via, with the second via being located closer to the crack arrest structure than the first via.

公开(公告)号：US20170174505A1

公开(公告)日：2017-06-22

申请号：US15447932

申请日：2017-03-02

Applicant: Texas Instruments Incorporated

Inventor： Ricky Alan JACKSON ,  Walter Baker MEINEL ,  Kalin Valeriev LAZAROV ,  Brian E. GOODLIN

IPC: B81B7/00 ,  B81C1/00 ,  H01L27/144

CPC classification number: B81B7/0019 ,  B81B2201/014 ,  B81C1/0038 ,  B81C1/00523 ,  B81C1/0069 ,  B81C1/00801 ,  H01L27/144

Abstract: A MEMS IR sensor, with a cavity in a substrate underlapping an overlying layer and a temperature sensing component disposed in the overlying layer over the cavity, may be formed by forming an IR-absorbing sealing layer on the overlying layer so as to cover access holes to the cavity. The sealing layer is may include a photosensitive material, and the sealing layer may be patterned using a photolithographic process to form an IR-absorbing seal. Alternately, the sealing layer may be patterned using a mask and etch process to form the IR-absorbing seal.

公开(公告)号：US20150246810A1

公开(公告)日：2015-09-03

申请号：US14712403

申请日：2015-05-14

Applicant: Texas Instruments Incorporated

Inventor： Ricky Alan JACKSON ,  Walter Baker MEINEL ,  Kalin Valeriev LAZAROV ,  Brian E. GOODLIN

IPC: B81C1/00

CPC classification number: B81B7/0019 ,  B81B2201/014 ,  B81C1/0038 ,  B81C1/00523 ,  B81C1/0069 ,  B81C1/00801 ,  H01L27/144

Abstract: A MEMS IR sensor, with a cavity in a substrate underlapping an overlying layer and a temperature sensing component disposed in the overlying layer over the cavity, may be formed by forming an IR-absorbing sealing layer on the overlying layer so as to cover access holes to the cavity. The sealing layer is may include a photosensitive material, and the sealing layer may be patterned using a photolithographic process to form an IR-absorbing seal. Alternately, the sealing layer may be patterned using a mask and etch process to form the IR-absorbing seal.

Abstract translation: 可以通过在覆盖层上形成IR吸收密封层来形成MEMS IR传感器，该MEMS红外传感器在衬底上覆盖覆盖层的空腔和设置在空腔上的上覆层中的温度感测部件，以便覆盖通路孔 到空腔。 密封层可以包括感光材料，并且可以使用光刻工艺对密封层进行图案化以形成IR吸收密封。 或者，可以使用掩模和蚀刻工艺对密封层进行图案化以形成IR吸收密封。

公开(公告)号：US20220242722A1

公开(公告)日：2022-08-04

申请号：US17388301

申请日：2021-07-29

Applicant: Texas Instruments Incorporated

Inventor： Ting-Ta YEN ,  Jeronimo SEGOVIA-FERNANDEZ ,  Ricky Alan JACKSON ,  Benjamin COOK

IPC: B81B7/00

Abstract: A semiconductor system includes a substrate. The substrate has a front side and a back side. A device is formed on the front side of the substrate. A vertical spring is etched in the substrate about the device. A trench is etched in the front side of the substrate about the device. A wall of the trench forms a side of the vertical spring.

公开(公告)号：US20210025948A1

公开(公告)日：2021-01-28

申请号：US16521053

申请日：2019-07-24

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Jo BITO ,  Benjamin Stassen COOK ,  Dok Won LEE ,  Keith Ryan GREEN ,  Ricky Alan JACKSON ,  William David FRENCH

IPC: G01R33/00 ,  G01R33/07

Abstract: A structure includes a substrate which includes a surface. The structure also includes a horizontal-type Hall sensor positioned within the substrate and below the surface of the substrate. The structure further includes a patterned magnetic concentrator positioned above the surface of the substrate, and a protective overcoat layer positioned above the magnetic concentrator.

公开(公告)号：US20190206785A1

公开(公告)日：2019-07-04

申请号：US15898694

申请日：2018-02-19

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Ricky Alan JACKSON ,  Ting-TA YEN ,  Brian E. GOODLIN

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/58 ,  H01L23/532 ,  H01L25/07

CPC classification number: H01L23/49866 ,  H01L23/49838 ,  H01L23/53238 ,  H01L23/562 ,  H01L23/585 ,  H01L24/11 ,  H01L24/12 ,  H01L24/48 ,  H01L25/074

Abstract: An electronic device comprises: a molybdenum layer; a bond pad formed on the molybdenum layer, the bond pad comprising aluminum; and a wire bonded to the bond pad, the wire comprising gold.