TEMPERATURE SENSOR USING EXTERNAL DIODE
    1.
    发明公开

    公开(公告)号:US20240068880A1

    公开(公告)日:2024-02-29

    申请号:US17897549

    申请日:2022-08-29

    CPC classification number: G01K7/01

    Abstract: Described embodiments include a circuit for temperature sensing having a first current source coupled to a diode input terminal. The first current source provides a first current at a first current output. A second current source provides a second current at a second current output. The second current is larger than the first current. A first switch is coupled between the second current source output and the diode input terminal. A capacitor is coupled between the diode input terminal and a temperature output terminal. A second switch is coupled between the temperature output terminal and a ground terminal. The temperature output terminal provides a temperature signal having a voltage that is proportional to a temperature of a component.

    Voltage sensing circuit
    2.
    发明授权

    公开(公告)号:US11293954B2

    公开(公告)日:2022-04-05

    申请号:US16363779

    申请日:2019-03-25

    Abstract: Aspects of the disclosure provide for a circuit. In some examples, the circuit includes a Zener diode, a first current source, a first n-type field effect transistor (FET), a first inverter circuit, and a second current source. The Zener diode has a cathode coupled to a first node and an anode coupled to a second node. The first current source has a first terminal coupled to the second node and a second terminal coupled to a ground terminal. The first n-type FET has a gate terminal coupled to the second node, a source terminal coupled to the ground terminal, and a drain terminal coupled to a third node. The first inverter circuit has an input coupled to the third node and an output coupled to a fourth node. The second current source has a first terminal coupled to a fifth node and a second terminal coupled to the third node.

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