公开(公告)号：US20230352580A1

公开(公告)日：2023-11-02

申请号：US17732211

申请日：2022-04-28

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Sheldon Douglas HAYNIE ,  Scott SUMMERFELT

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/7823 ,  H01L29/66689 ,  H01L29/41775 ,  H01L29/41758 ,  H01L29/0607

Abstract: A semiconductor device includes a semiconductor substrate including a corrugated surface. A body has a first conductivity type and includes a portion extending continuously along the corrugated surface. A gate dielectric layer is on the body and extends continuously along the corrugated surface. A gate is on the gate dielectric layer, the gate extending continuously along the corrugated surface. A corrugated conformal drift region has a second conductivity type opposite from the first conductivity type, and is on and conformal with the corrugated surface of the semiconductor substrate, and extends continuously along the corrugated surface. A source has the second conductivity type and includes a portion extending continuously along the corrugated surface, the source being in contact with the body. A drain contact region electrically coupled to the drift region and having the second conductivity type.