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1.
公开(公告)号:US20230387260A1
公开(公告)日:2023-11-30
申请号:US17826872
申请日:2022-05-27
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Sheldon Douglas HAYNIE , Alexei SADOVNIKOV
IPC: H01L29/66 , H01L29/78 , H01L21/3213
CPC classification number: H01L29/66681 , H01L29/66795 , H01L29/785 , H01L29/7816 , H01L21/32134 , H01L29/66628
Abstract: A method includes forming a gate on a semiconductor layer of a substrate. A hard mask is formed over the gate and the semiconductor layer to expose a portion of the semiconductor layer. The exposed portion of the semiconductor layer is isotropically etched away to form a recess having a depth. A first selective epitaxial growth of a first semiconductor material doped with a first dopant is performed on the semiconductor layer in the recess. A second selective epitaxial growth of a second semiconductor material doped with a second dopant is performed on the first semiconductor material in the recess. The hard mask is then removed.
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公开(公告)号:US20230352580A1
公开(公告)日:2023-11-02
申请号:US17732211
申请日:2022-04-28
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Sheldon Douglas HAYNIE , Scott SUMMERFELT
IPC: H01L29/78 , H01L29/66 , H01L29/417
CPC classification number: H01L29/7823 , H01L29/66689 , H01L29/41775 , H01L29/41758 , H01L29/0607
Abstract: A semiconductor device includes a semiconductor substrate including a corrugated surface. A body has a first conductivity type and includes a portion extending continuously along the corrugated surface. A gate dielectric layer is on the body and extends continuously along the corrugated surface. A gate is on the gate dielectric layer, the gate extending continuously along the corrugated surface. A corrugated conformal drift region has a second conductivity type opposite from the first conductivity type, and is on and conformal with the corrugated surface of the semiconductor substrate, and extends continuously along the corrugated surface. A source has the second conductivity type and includes a portion extending continuously along the corrugated surface, the source being in contact with the body. A drain contact region electrically coupled to the drift region and having the second conductivity type.
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