LOW-FREQUENCY COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) ULTRASONIC TRANSDUCER

    公开(公告)号:US20230271222A1

    公开(公告)日:2023-08-31

    申请号:US17682576

    申请日:2022-02-28

    CPC classification number: B06B1/0292

    Abstract: In accordance with at least one example of the description, a device includes a substrate and a linear array of transducer elements across the substrate and forming a cavity region. The cavity region is bounded by a first termination region and a second termination region. The linear array of transducer elements includes a transducer element having a front-end-of-line (FEOL) portion that is formed by a FEOL process and a back-end-of-line (BEOL) portion that is formed by an n-layer BEOL process. The BEOL portion of the transducer element includes a ferroelectric capacitor and a conductive element. The conductive element is formed by metal layer-n of the n-layer BEOL process, where n denotes an integer greater than 3.

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