公开(公告)号：US20220199611A1

公开(公告)日：2022-06-23

申请号：US17129495

申请日：2020-12-21

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Zaichen CHEN ,  Akram Ali SALMAN ,  Henry Litzmann EDWARDS

IPC: H01L27/02 ,  H01L29/06 ,  H01L21/8249

Abstract: In an example, an electronic device includes a first well having a first conductivity type within a semiconductor substrate and a second well having a second opposite conductivity type within the semiconductor substrate and touching the first well. The device further includes a third well having the first conductivity type within the second well. A metallic structure in direct contact with at least a portion of a surface of the third well thereby forms a Schottky barrier between the third well and the metallic structure.