公开(公告)号：US20250098266A1

公开(公告)日：2025-03-20

申请号：US18756202

申请日：2024-06-27

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Zhikai Tang ,  Jungwoo Joh ,  Ujwal Radhakrishna

IPC: H01L29/417 ,  H01L29/20 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778

Abstract: Semiconductor devices with a source contact extending into a substrate are described. In one example, a semiconductor device comprises a semiconductor substrate including a source region, a gate region, a drain region, and a drain access region, where a heterojunction structure is disposed over the semiconductor substrate. The heterojunction structure includes a buffer layer over the semiconductor substrate and a barrier layer over the buffer layer. A gate stack is disposed over the barrier layer in the gate region. A source contact in the source region extends into the semiconductor substrate, including a first contact with a 2DEG in the heterojunction structure and a second contact with the semiconductor substrate.

公开(公告)号：US20240405024A1

公开(公告)日：2024-12-05

申请号：US18534056

申请日：2023-12-08

Applicant: Texas Instruments Incorporated

Inventor： Ujwal Radhakrishna ,  Yoganand Saripalli ,  Zhikai Tang ,  Timothy Merkin ,  Jungwoo Joh

IPC: H01L27/095 ,  H01L27/02 ,  H01L29/20 ,  H01L29/778

Abstract: The present disclosure generally relates to integrated devices with a conductive barrier structure. In an example, a semiconductor device includes a substrate, a conductive barrier structure, a channel layer, a barrier layer, a gate, and a conductive structure. The substrate is of a first semiconductor material. The conductive barrier structure is on the substrate. The channel layer is of a second semiconductor material and is on the conductive barrier structure. The barrier layer is on the channel layer, and the channel layer is between the barrier layer and the conductive barrier structure. The gate is over the barrier layer opposing the channel layer. The conductive structure is electrically coupled between the conductive barrier structure, the channel layer, and the barrier layer.

公开(公告)号：US20250048667A1

公开(公告)日：2025-02-06

申请号：US18361997

申请日：2023-07-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Ujwal Radhakrishna ,  Zhikai Tang ,  Johan Strydom ,  Jungwoo Joh

IPC: H01L29/778 ,  H01L29/40 ,  H01L29/423 ,  H01L29/45 ,  H01L29/47 ,  H01L29/872

Abstract: The present disclosure generally relates to a semiconductor device that includes a gate electrical contact that forms junctions with different energy barrier heights to a gate layer. In an example, a semiconductor device includes a semiconductor substrate, a drain electrical contact, a source electrical contact, a barrier layer, a gate layer, and a gate electrical contact. The drain and source electrical contacts are on the semiconductor substrate. The barrier layer is over a channel region of the semiconductor substrate between the drain and source electrical contacts. The gate layer is over the barrier layer. The gate layer includes first and second semiconductor portions. The gate electrical contact contacts the gate layer. The gate electrical contact includes first and second metal portions. The first and second metal portions form first and second junctions with the first and second semiconductor portions, respectively. The first and second junctions have different energy barrier heights.

公开(公告)号：US20240405078A1

公开(公告)日：2024-12-05

申请号：US18326698

申请日：2023-05-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Ujwal Radhakrishna ,  Yoganand Saripalli ,  Johan Strydom ,  Zhikai Tang ,  Dong Seup Lee

IPC: H01L29/20 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778

Abstract: The present disclosure generally relates to integrated devices with a conductive barrier structure. In an example, a semiconductor device includes a substrate, a conductive barrier structure, a channel layer, a barrier layer, a gate, and a conductive structure. The substrate is of a first semiconductor material. The conductive barrier structure is on the substrate. The channel layer is of a second semiconductor material and is on the conductive barrier structure. The barrier layer is on the channel layer, and the channel layer is between the barrier layer and the conductive barrier structure. The gate is over the barrier layer opposing the channel layer. The conductive structure is electrically coupled between the conductive barrier structure, the channel layer, and the barrier layer.