公开(公告)号：US20230269995A1

公开(公告)日：2023-08-24

申请号：US18004135

申请日：2021-07-07

申请人： THE UNIVERSITY OF HONG KONG

发明人： Kwok Leung CHAN ,  Boyu PENG

IPC分类号： H10K71/15 ,  H10K71/60 ,  H10K10/46

CPC分类号： H10K71/15 ,  H10K71/60 ,  H10K10/484 ,  H10K10/84

摘要： A method for manufacturing a semiconductor device having an organic semiconductor material is provided. The method includes performing a large-area solution shearing step to form a monolayer (1L) or bi-layer (2L) C10-DNTT crystals with low shearing speed and forming Au electrodes by thermal evaporation on a wafer. The large-area solution shearing step is performed at a temperature in a range between about 60° C. and about 65° C. and with a shearing speed in a range between about 2 μm/sand about 3 μm/s. The 1L or 2L crystals have single-crystalline domains extending over several millimeters. An organic field-effect transistor (OFET) comprising an active layer that comprises a monolayer (1L) or bi-layer (2L) C10-DNTT crystals formed according to the method is also provided.